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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYR745 series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V
k 1
a 2
IF(AV) = 7.5 A VF 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR745 series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR7 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Tmb 114 C square wave; = 0.5; Tmb 136 C square wave; = 0.5; Tmb 136 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40 40 40 40 7.5 15 135 150 1 150 175 MAX. 45 45 45 45 V V V A A A A A C C UNIT
IRRM Tj Tstg
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. MAX. UNIT 60 3 K/W K/W
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 7.5 A; Tj = 125C IF = 15 A; Tj = 125C IF = 15 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C
PBYR745 series
MIN. -
TYP. MAX. UNIT 0.45 0.65 0.64 0.13 17 270 0.57 0.72 0.84 1 22 V V V mA mA pF
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR745 series
8 7 6 5
Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.02 Ohms
PBYR745
Tmb(max) (C) D = 1.0
126 129
100
Reverse current, IR (mA)
PBYR745
125 C
0.5 0.2
132 135
10 100 C 1 75 C 50 C 0.1
4 3
0.1
I tp D= tp T t
138 141 144 147 150 12
2 1 0 0 2
T
0.01 0
Tj = 25 C 25 Reverse voltage, VR (V) 50
4 6 8 Average forward current, IF(AV) (A)
10
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Forward dissipation, PF (W) PBYR745
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
8
Tmb(max) / C
126 129
Cd / pF 1000
PBYR745
Vo = 0.42 V 7 Rs = 0.02 Ohms 6 5 4 3 2 1 0 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 2.8 4 2.2 1.9 a = 1.57
132 135 138 141 144 147 150 8
10 1 10 VR / V 100 100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
50
Forward current, IF (A) Tj = 25 C Tj = 125 C
PBYR745
10
Transient thermal impedance, Zth j-mb (K/W)
40 1 30 typ 20 max 10
T
0.1
P D tp D= tp T t
0
0
0.2
0.4 0.6 0.8 1 Forward voltage, VF (V)
1.2
1.4
0.01
1us
10us
100us
1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR745
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
PBYR745 series
4,5 max
10,3 max
1,3
3,7 2,8
5,9 min
3,0 max not tinned 3,0
15,8 max
13,5 min
1,3 max 1 (2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR745 series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1998
5
Rev 1.300

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