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| High Speed GaAlAs Infrared Emitter OPE5687HP The OPE5687HP is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. FEATURES * Ultra high-speed : 25ns rise time * 880nm wavelength * Wide beam angle * Low forward voltage * High power and high reliability * Available for pulse operating APPLICATIONS * Emitter of IrDA * IR Audio and Telephone * High speed IR communication * IR LANs * Available for wireless digital data transmission DIMENSIONS (Unit : mm) 5.0 1.3 Max 2-0.5 2.0 2.5 5.7 Anode Cathode Tolerance : 0.2mm STORAGE * Condition : 5C~35C,R.H.60% * Terms : within 3 months from production date * Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS (Ta=25C ) Item Symbol Rating Power Dissipation PD 150 Forward current IF 100 Pulse forward current *1 IFP 1.0 Reverse voltage VR 4.0 Operating temp. Topr. -25~ +85 *2 Soldering temp. Tsol. 260. *1 .Duty ratio = 1/100, pulse width=0.1ms. *2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Symbol Forward voltage Reverse current Capacitance Radiant intensity Power Peak emission wavelength Spectral bandwidth 50% Half angle Optical rise & fall time(10%~90%) Cut off frequency *3 7.7 8.7 24.0 Min Unit mW mA A V C C Conditions IF=50mA VR=4V f=1MHz IF=50mA IF=100mA IF=50mA IF=50 IF=50 IF=50 IF=50mA DC +10mA p-p (Ta=25C) Min. Typ. 1.5 20 50 35 880 45 22 25/15 14 Max. 2.0 10 Unit V A mW/ mW nm nm deg. ns MHz VF IR Ct Ie Po p tr/tf fc 25 20 *3 . 10logPo(fc MHz)/Po(0.1 MHz)=-3 High Speed GaAlAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. 100 80 60 40 20 0 -20 0 20 40 60 80 100 Ambient Temperature Ta( ) 3 1 0.5 0.3 0.1 200 100 50 30 10 5 OPE5687HP RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25 Ta=25 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. IF=50mA 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 1.0 0.8 0.6 0.4 0.2 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25 Ambient Temperature Ta( ) FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Ta=25 50 30 20 10 5 4 3 2 1 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Forward Voltage VF(V) 0.0 700 750 800 850 900 950 Emission Wavelength (nm) ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 -20 -10 0 10 20 -30 -40 -50 -60 -70 -80 -90 1.0 30 40 50 60 70 80 90 0.5 0 0.5 1.0 Relative Radiant intensity |
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