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NTE2325 Silicon NPN Transistor High Voltage Switch
Features: D High Reverse Voltage: VCBO = 900V (Max) D High Speed Switching: tf = 0.7s (Max) Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak Collector Current (Note 1), icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 10% Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Sustaining Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCEO(sus) IC = 1mA, IE = 0 IC = 5mA, RBE = IE = 1mA, IC = 0 VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 3A, L = 500H, IB = 1A 900 800 7 - - 800 800 900 - - - - - - - - - - - 10 10 - - - V V V A A V V V Symbol Test Conditions Min Typ Max Unit
VCEX(sus)1 IC = 1A, IB1 = 200mA, IB2 = -200mA, L = 2mH, Clamped VCEX(sus)2 IC = 500mA, IB1 = 100mA, IB2 = -100mA, L = 5mH, Clamped
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter ON Characteristics DC Current Gain hFE1 hFE2 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product Output Capactiance Switching Characteristics Turn-On Time Storage Time Fall Time ton tstg tf IC = 2A, IB1 = 400mA, IB2 = 800mA, RL = 200, VCC = 400V - - - 1.0 3.0 0.7 - - - s s s fT Cob VCE = 10V, IC = 200mA VCB = 10V, f = 1MHz - - 15 60 - - MHz pF VCE(sat) VBE(sat) VCE = 5V, IC = 200mA VCE = 5V, IC = 1A IC = 1.5A, IB = 300mA IC = 1.5A, IB = 300mA 10 8 - - - - - - - - 2.0 1.5 V V Symbol Test Conditions Min Typ Max Unit
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab

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Price & Availability of NTE2325

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2325 31C3548	NTE Electronics Inc	Transistor, Npn, 800V, 3A, To-220-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:3A; Power Dissipation:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:15Mhzrohs Compliant: Yes \|Nte Electronics NTE2325		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2325 2368-NTE2325-ND	NTE Electronics Inc	TRANS NPN 800V 3A TO220	100: USD2.65 50: USD2.71 20: USD2.87 10: USD3.03 1: USD3.19	48

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2325	NTE Electronics Inc	Transistor NPN Silicon 900V IC=3A TO-220 Case Tf=0.7us High Voltage Switch	7500: USD2.35 5000: USD2.44 2500: USD2.48 1000: USD2.55 500: USD2.62 250: USD2.79 100: USD2.89 10: USD3.66	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2325	NTE Electronics Inc			4
NTE2325	NTE Electronics Inc			2

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2325	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 3A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN	8: USD2.6325 3: USD3.51 1: USD5.265	11
NTE2325	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 3A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN	1: USD6	1
NTE2325	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 3A I(C), 800V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN	3: USD5.1975 1: USD6.237	3

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2325 NTE2325	NTE Electronics Inc	Transistor: NPN; bipolar; 800V; 3A; 50W; TO220-3	10: USD2.97 3: USD3.36 1: USD3.74	7

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