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Schottky Barrier Diodes (SBD) MA4X726 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 2.9 - 0.05 2.8 - 0.3 0.65 0.15 + 0.2 1.5 - 0.05 + 0.25 0.65 0.15 1.9 0.2 0.95 * Two MA3X721s are contained in one package (two diodes in a different direction) * Allowing to rectify under (IF(AV) = 200 mA) condition * High reliability + 0.2 0.95 0.5 I Features 0.5 R 4 1 + 0.1 3 0.4 - 0.05 2 0.2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak Single Double*1 Single Double*1 Single Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 225 200 150 1 0.75 150 -55 to +150 Unit V V mA 1.1 - 0.1 0.4 0.2 mA 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1O A C C 3 2 Internal Connection 4 1 forward surge current*2 Double*1 Junction temperature Storage temperature Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3.0 Conditions Min Typ Max 50 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Applicaiton Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 0.1 to 0.3 0.8 0.16 - 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.6 - 0 + 0.1 0.4 - 0.05 1.45 + 0.1 1 MA4X726 IF V F 103 100C 25C 102 Ta = 150C - 20C 0.5 Schottky Barrier Diodes (SBD) VF Ta 105 IR VR Forward current IF (mA) 0.4 Forward voltage VF (V) Reverse current IR (A) IF = 200 mA 104 Ta = 150C 10 0.3 100 mA 0.2 103 100C 1 102 10-1 25C 10 0.1 10 mA 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 -40 1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 40 35 f = 1 MHz Ta = 25C IR T a 105 Terminal capacitance Ct (pF) 104 VR = 30 V Reverse current IR (A) 30 25 20 15 10 5 0 103 5V 1V 102 10 0 5 10 15 20 25 30 1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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