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Schottky Barrier Diodes (SBD) MA2P701, MA2P701A Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.5 0.1 1 2 5.0 0.5 I Features * Low forward rise voltage VF, optimum for low-voltage rectification * Optimum for high-frequency rectification because of its short reverse recovery time (trr) * Allowing large-current rectification in spite of its small-size because of its low thermal resistance (Rth(j-a)) 4.0 0.2 1.5 0.1 4.0 0.5 3.0 0.2 0.7 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage MA2P701 MA2P701A MA2P701 MA2P701A IFM IF(AV) IFSM Tj Tstg VRRM Symbol VR Rating 20 40 20 40 2 1 6 125 -55 to +125 A A A C C V Unit V 1.5 0.2 1 : Anode 2 : Cathode Mini Type Power Package (2pin) Peak forward current Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Marking Symbol * MA2P701 : 701 * MA2P701A : 701A Note) *1 : With a printed-circuit board (copper foil area cathode side) 2 mm x 10 mm or more (copper foil area anode side) 1 mm x 10 mm or more. Board thickness t = 1.6 mm *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) MA2P701 MA2P701A Forward voltage (DC) Terminal capacitance Reverse recovery time*2 High voltage rectification*1 VF Ct trr Rth(j-a) Symbol IR VR = 20 V VR = 40 V IF = 1.0 A VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 210 14 0.15 Conditions Min Typ Max 1 2 0.55 V pF ns C/mW Unit mA Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 150 MHz 10 mm 10 mm 3. *1 : With a printed-circuit board (copper foil area cathode side) K A 2 mm x 10 mm or more (copper foil area anode side) 2 mm 1 mm 1 mm x 10 mm or more. Board thickness t = 1.6 mm *2 : trr measuring instrument 0 to 0.14 0.4 0.2 0.3 0.1 1 MA2P701, MA2P701A Schottky Barrier Diodes (SBD) Common characteristics charts Bias Application Unit N-50BU IF V F 104 VF Ta 0.8 0.7 A 103 Ta = 125C - 20C Forward current IF (mA) Forward voltage VF (V) 0.6 0.5 0.4 0.3 0.2 50 mA 0.1 IF = 1 A Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 75C 102 25C Input Pulse tr 10% tp t IF Output Pulse 10 trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 1 VR 90% tp = 2 s tr = 0.35 ns = 0.05 10-1 0 0.2 0.4 0.6 0.8 1.0 0 -40 0 40 80 120 160 Forward voltage VF (V) Ambient temperature Ta ( C) trr measuring instrument Characteristics charts of MA2P701 IR VR 10 Ta = 125C 1 300 f = 1 MHz Ta = 25C Ct VR 10 IR Ta VR = 20 V 10 V Terminal capacitance Ct (pF) Reverse current IR (mA) Reverse current IR (mA) 0 5 10 15 20 25 30 1 75C 10-1 200 10-1 10-2 25C 10-3 100 10-2 10-4 0 5 10 15 20 25 30 0 10-3 -40 0 40 80 120 160 Reverse voltage VR (V) Reverse voltage VR (V) Ambient temperature Ta (C) Characteristics charts of MA2P701A IR VR 10 Ta = 125C 300 f = 1 MHz Ta = 25C Ct VR 10 IR T a VR = 40 V 20 V 1 Terminal capacitance Ct (pF) Reverse current IR (mA) Reverse current IR (mA) 0 5 10 15 20 25 30 1 75C 10-1 200 10-1 10-2 25C 100 10-3 10-2 10-4 0 10 20 30 40 50 60 0 10-3 -40 0 40 80 120 160 200 Reverse voltage VR (V) Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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