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Schottky Barrier Diodes (SBD)
MA2J727
Silicon epitaxial planar type
Unit: mm
For super high speed switching For small current rectification Features
* VR = 50 V is guaranteed * IF(AV) = 200 mA rectification is possible
5
1.250.1 0.350.1
0.70.1
1 0 to 0.1 1.70.1 0.16+0.1 -0.06 0 to 0.1 2.50.2
Parameter Reverse voltage Repetitive peak reverse voltage Peak forward current Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature
Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg
Rating 50 50 300 200 1 150 -55 to +150
Unit V V mA mA A C C
1: Anode 2: Cathode EIAJ: SC-76 SMini2-F1 Package
Marking Symbol: 2F
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics Ta = 25C 3C
Parameter Reverse current Forward voltage Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time * Ct trr VR = 50 V IF = 30 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3.0 Conditions Min Typ Max 200 0.36 0.55 Unit A V V pF ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
(0.15)
Absolute Maximum Ratings Ta = 25C
0.40.1
2 0.50.1
5
Publication date: October 2003
SKH00136AED
1
MA2J727
I F VF
103 105 Ta = 150C
I R VR
0.5
VF Ta
IF = 200 mA
102
Forward current IF (mA)
Reverse current IR (A)
Forward voltage VF (V)
Ta = 150C
-20C 100C
104
0.4
10
103 100C
100 mA 0.3
1
25C
102 25C 10
0.2 30 mA 0.1
10-1
10-2
0
0.1
0.2
0.3
0.4
0.5
0.6
1
0
10
20
30
40
50
60
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR Ta
105 30
Ct VR
f = 1 MHz Ta = 25C
Terminal capacitance Ct (pF)
104
25
Reverse current IR (A)
20
103 VR = 30 V 10
2
15
5V
10
10
5
1 -40
0 0 40 80 120 160 200
0
10
20
30
40
50
60
Ambient temperature Ta (C)
Reverse voltage VR (V)
2
SKH00136AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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