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Switching Diodes MA2B182 Silicon epitaxial planar type 0.56 max. Unit : mm For high-voltage switching circuits, small power rectification 1 I Features * High reverse voltage (VR = 200 V) * Large output current IO * DO-35 Package 1st Band 2nd Band I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current* Average power dissipation Junction temperature Storage temperature Note) * : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 -65 to +175 Unit V V mA mA A mW C C 2 1.95 max. 24 min. 1: Cathode 2: Anode JEDEC: DO-35 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Symbol IR VF VR Ct VR = 200 V IF = 200 mA IR = 100 A VR = 0 V, f = 1 MHz 250 4.5 Conditions Min Typ Max 200 1.2 Unit nA V V pF Note) Rated input/output frequency: 3 MHz I Cathode Indication Type No. Color 1st Band 2nd Band MA2B182 White Green 4.5 max. 24 min. COLORED BAND INDICATES CATHODE 1 MA2B182 IF V F 103 1.6 1.4 Switching Diodes VF Ta 10 IR T a 102 1 Forward current IF (mA) Forward voltage VF (V) 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 1 mA 0.4 0.2 Reverse current IR (A) 10 10-1 VR = 200 V 10-2 1 Ta = 150C 100C 25C 10-1 - 20C 10-3 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10-4 0 40 80 120 160 200 0 20 40 60 80 100 120 140 160 180 Forward voltage VF (V) Ambient temperature Ta (C) Ambient temperature Ta (C) IR VR 1 Ta = 150C 10-1 Reverse current IR (A) 10-2 100C 10-3 10-4 25C 10-5 0 40 80 120 160 200 Reverse voltage VR (V) 2 |
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