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LESHAN RADIO COMPANY, LTD.
L2SC4226QT1
3
1 2
SC-70/SOT-323
DESCRIPTION
The L2SC4226QT1 is a low supply voltage transistor designed for VHF, U HF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package.
FEATURES
* Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA * High Gain |S21e| = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA * Small Mini Mold Package EIAJ: SC-70
2
The information in this document is subject to change without notice.
L2SC4226QT1-1/5
LESHAN RADIO COMPANY, LTD.
L2SC4226QT1
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 12 3 100 150 150 -65 to +150 V V V mA mW C C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure
SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF
MIN.
TYP.
MAX. 1.0 1.0
UNIT
TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA*1
A A
125 3.0 4.5 0.7 7 9 1.2
250 GHz 1.5 pF dB 2.5 dB
VCE = 3 V, IC = 7 mA VCE = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz
*1 *2
Pulse Measurement ; PW 350 s, Duty Cycle 2 % Pulsed. Measured with 3 terminals bridge, Emitter and Case should be grounded.
L2SC4226QT1-2/5
LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 20 PT - Total Power Dissipation - mW Free Air 200 IC - Collector Current - mA VCE = 3 V
L2SC4226QT1
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
10
100
0
50
100
150
0
0.5 VBE - Base to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT
1.0
TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 IC - Collector Current - mA IB =160 A 140 A 120 A 100 A 80 A 10 5 60 A 40 A 20 A 5 VCE - Collector to Emitter Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 fT - Gain Bandwidth Product - GHz |S21e|2 - Insertion Power Gain - dB VCE = 3 V f = 1.0 GHz 10 15 10 10 0.5 hFE - DC Current Gain 20 100 200
VCE = 3 V
15
50
20
0
1
5
10
50
IC - Collector Current - mA INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 3 V f = 1.0 GHz
10
5
5
2
1 0.5
1
5
10
50
0 0.5
1
5
10
50
100
IC - Collector Current - mA
IC - Collector Current - mA
L2SC4226QT1-3/5
LESHAN RADIO COMPANY, LTD.
L2SC4226QT1
NOISE FIGURE vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY
6
|S21e|2 - Insertion Power Gain - dB
VCE = 3 V f = 1 GHz
24 20 16 12 8 4 0 0.1
VCE = 3 V IC = 7 mA
NF - Noise Figure - dB
4
2
0 0.5
1
5
10
50
100
0.2
0.5
1.0
2.0
5.0
IC - Collector Current - mA FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
f - Frequency - GHz
5.0
Cre - Feed-back Capacitance - pF
f = 1 MHz 2.0 1.0 0.5
0.2 0.1
1
2
5
10
20
50
VCB - Collector to Base Voltage - V
L2SC4226QT1-4/5
LESHAN RADIO COMPANY, LTD.
L2SC4226QT1
SC-70 / SOT-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
A L
3
DIM A B C D G H J K L N S
INCHES MILLIMETERS MIN MA X MIN MA X
0.071 0.045 0.032 0.012 0.047 0.000 0.004 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 0.087 0.053 0.040 0.016 0.055 0.004 0.010 1.80 1.15 0.80 0.30 1.20 0.00 0.10 2.20 1.35 1.00 0.40 1.40 0.10 0.25
S
1 2
B
D G
0.425 REF 0.650 BSC 0.700 REF 2.00 2.40
C 0.05 (0.002)
N K
J
H
PIN 1. BASE
2. EMITTER 3. COLLECTOR
0.025 0.65
0.025 0.65
0.075 1.9 0.035 0.9 0.028 0.7 inches mm
L2SC4226QT1-5/5

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