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Provisional Data Sheet No. PD-9.418A
HEXFET(R) POWER MOSFET
500 Volt, 0.415 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance.
IRFN450
N-CHANNEL
Product Summary
Part Number IRFN450 BVDSS 500V RDS(on) 0.415 ID 12A
Features:
s s s s s s s
Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight
IRFN450
12.0 8.0 48 150 1.2 20 750 12.0 15.0 3.5 -55 to 150 300 (for 5 seconds) 2.6 (typical)
Units A
W W/K V mJ A mJ V/ns
oC
g
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Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
500 -- -- -- 2.0 5.5 -- -- -- -- 55 5.0 27 -- -- -- -- --
Typ. Max. Units
-- 0.78 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.0 -- -- 0.415 0.515 4.0 -- 25 250 100 -100 120 19 70 35 190 170 130 -- V V/C V S( ) A nA nC
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 8A VGS = 10V, ID = 12A VDS = VGS, ID = 250A VDS > 15V, IDS = 8A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 12A VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = 250V, ID = 12A, RG = 2.35, VGS = 10V see figure 10
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
ns
LS
Internal Source Inductance
--
6.5
--
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
2700 600 240
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0 MHz see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- -- -- 12 48
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
A
VSD t rr Q RR t on
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Tj = 25C, I S = 12A, V GS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. -- -- -- -- -- -- 1.7 1600 14 V ns C
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC Board
Min. Typ. Max. Units
-- -- -- TBD 0.83 -- K/W
Test Conditions
Soldered to a copper clad PC board
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Fig. 1 -- Typical Output Characteristics TC = 25C
Fig. 2 -- Typical Output Characteristics TC = 150C
ID = 12A
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs.Temperature
ID = 12A
Fig. 5 -- Typical Capacitance Vs. Drain-to-Source Voltage
Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source Voltage
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1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
ID , Drain Current (A)
10us 100us 1ms 1 10ms
10
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VDS , Drain-to-Source Voltage (V)
Fig. 7 -- Typical Source-to-Drain Diode Forward Voltage
Fig. 8 -- Maximum Safe Operating Area
Fig. 9 -- Maximum Drain Current Vs. Case Temperature
Fig. 10a -- Switching Time Test Circuit
Fig. 10b -- Switching Time Waveforms
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1 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t1 / t2 2. Peak T = P DM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a -- Unclamped Inductive Test Circuit
Fig. 12b -- Unclamped Inductive Waveforms
Fig. 12c -- Max. Avalanche Energy vs. Current
Fig. 13a -- Gate Charge Test Circuit
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Repetitive Rating; Pulse width limited by
Fig. 13b -- Basic Gate Charge Waveform
maximum junction temperature. (see figure 11) @ VDD = 50V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 12A, VGS = 10V, 25 RG 200 ISD 12A, di/dt 130 A/s, VDD BV DSS, TJ 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Case Outline and Dimensions -- SMD-1
All dimensions in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/96
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