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| FQP44N10F 100V N-Channel MOSFET January 2006 FRFET FQP44N10F 100V N-Channel MOSFET Features * * * * * * * 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating TM Description These N-Channel enhancement mode power field effect transist-ors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc-e, and withstand high energy pulse in the avalanche and co-mmutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D G GDS TO-220 FQP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) Parameter FQP44N10F 100 43.5 30.8 174 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 530 43.5 14.6 15 146 0.97 -55 to +175 300 Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP44N10F 1.03 0.5 62.5 Units C/W C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP44N10F Rev. A1 FQP44N10F 100V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP44N10F Device FQP44N10F Package TO-220 TC = 25C unless otherwise noted Reel Size -- Tape Width -- Quantity 50 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 21.75 A VDS = 40 V, ID = 21.75 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 100 -----2.0 ------ Typ -0.1 -----0.03 30 1400 425 85 19 190 90 100 48 9.0 24 ---70 175 Max Units --10 100 100 -100 4.0 0.039 -1800 550 110 45 390 190 210 62 --43.5 174 1.5 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 50 V, ID = 43.5A, RG = 25 ---(Note 4, 5) --------- VDS = 80 V, ID = 43.5A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 43.5 A VGS = 0 V, IS = 43.5 A, dIF / dt = 100 A/s (Note 4) -- 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.42mH, IAS = 43.5A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 43.5A, di/dt 3200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQP44N10F Rev. A1 2 www.fairchildsemi.com FQP44N10F 100V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : Figure 2. Transfer Characteristics 10 2 10 2 ID, Drain Current [A] ID , Drain Current [A] 10 1 175 10 1 25 10 0 -55 Notes : 1. VDS = 40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 10 -1 10 0 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.15 0.12 VGS = 10V VGS = 20V 0.06 IDR , Reverse Drain Current [A] 10 2 RDS(on) [], Drain-Source On-Resistance 0.09 10 1 10 0 0.03 Note : TJ = 25 175 10 -1 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 0.00 0 30 60 90 120 150 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 4000 3500 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 10 VDS = 50V VDS = 80V Capacitance [pF] 2500 2000 1500 1000 500 0 -1 10 8 Ciss Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 Crss 2 Note : ID = 43.5A 10 0 10 1 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQP44N10F Rev. A1 3 www.fairchildsemi.com FQP44N10F 100V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 Notes : 1. VGS = 10 V 2. ID = 21.75 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 10 3 Operation in This Area is Limited by R DS(on) 40 ID, Drain Current [A] 10 2 100 s 1 ms 10 ms ID, Drain Current [A] 30 10 1 DC 20 10 0 Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 10 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 175 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] Figure 11. Transient Thermal Response Curve 10 0 Z JC(t), Thermal Response D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e N o te s : 1 . Z J C ( t) = 1 . 0 3 /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t ) PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQP44N10F Rev. A1 4 www.fairchildsemi.com FQP44N10F 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP44N10F Rev. A1 5 www.fairchildsemi.com FQP44N10F 100V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP44N10F Rev. A1 6 www.fairchildsemi.com FQP44N10F 100V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters FQP44N10F Rev. A1 7 www.fairchildsemi.com FQP44N10F 100V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FQP44N10F Rev. A1 www.fairchildsemi.com |
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