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Data Sheet 200 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions Pin 3 Pin 2 NC .037 .115 .037 1 3 2 .110 .060 .016 FMBB914 Description 3 1 2 Features n PLANAR PROCESS n 200 mW POWER DISSIPATION Pin 1 .043 .004 .016 n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 FMBB914 Units Volts Volts Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating Temperature Range...TJ Storage Temperature Range...TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 100 mA Maximum DC Reverse Current...IR Maximum Frequency...f Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...tRR .01 uF PVV = 100ns 5K Ohms 50 Ohms RG = 50 Ohms Page 10-22 @ VR = 70V FMBB914 80 80 ............................................. 100 ............................................... mAmps ............................................. 4.0 ............................................... ......................................... 200 .......................................... ......................................... -25 to 85 .......................................... ......................................... -55 to 125 .......................................... ............................................. 1.2 ............................................... ............................................. 0.1 ............................................... ............................................. 100 ............................................... ............................................. 3.5 ............................................... ............................................. 4.0 ............................................... Amps mW C C Volts Amps MHz pF ns Test Device Under Test IF IR Output Trr 0.1 IR |
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