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Datasheet File OCR Text: |
PROCESS Small Signal Transistor NPN - Silicon RF Transistor Chip CP214 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 44,460 PRINCIPAL DEVICE TYPES 2N5109 B E EPITAXIAL PLANAR 16 x 16 MILS 7.5 MILS 2.9 x 3.4 MILS 2.9 x 3.4 MILS Al - 20,000A Au - 16,000A BACKSIDE COLLECTOR R1 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CP214 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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