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APTM20UM09S
Single switch Series & parallel diodes MOSFET Power Module
SK CR1 D
VDSS = 200V RDSon = 9m max @ Tj = 25C ID = 195A @ Tc = 25C
Application * * * Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
S
Q1
Features
G
*
* * * Benefits * * *
Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Low stray inductance - M6 power connectors - M4 signal connectors High level of integration
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 195 145 780 30 9 780 65 30 1300 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM20UM09S - Rev 1 May, 2004
Tc = 25C
APTM20UM09S
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1mA
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Tj = 25C Tj = 125C
Min 200
Typ
Max 400 2000 9 5 400
Unit V A mW V nA
VGS = 10V, ID = 74.5A VGS = VDS, ID = 4mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 195A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 195A RG = 1.2W Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 195A, RG = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 195A, RG = 1.2 Min Typ 12.3 4 0.39 217 143 157 28 56 81 99 1029 1011 1351 1180 J J ns Max Unit nF
nC
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s IF = 120A VR = 133V di/dt = 400A/s Min Tc = 85C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
APTM20UM09S - Rev 1 May, 2004
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTM20UM09S
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/s IF = 100A VR = 133V di/dt = 200A/s Min Tc = 90C Typ 100 1 1.4 0.9 60 110 200 840 Max 1.1 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode 2500 -40 -40 -40 3 Min Typ Max 0.16 0.46 0.6 150 125 100 1.2 5 400 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6
APT website - http://www.advancedpower.com
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APTM20UM09S - Rev 1 May, 2004
APTM20UM09S
Package outline
Mounting holes: 4xAE6.5 mm
APT website - http://www.advancedpower.com
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APTM20UM09S - Rev 1 May, 2004
APTM20UM09S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.1 0.05 0.0001 0.001 0.01 0.7 0.5 0.3 Single Pulse 0.9
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 600 ID, Drain Current (A) ID, Drain Current (A) 500
VGS=15 & 10V
600 500 400 300 200 100 0
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
400 300 200 100 0 0 2.5 5 7.5 10
8V
7V 6V
T J=125C
TJ=25C
TJ=-55C
12.5
15
2
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 100 200 300 ID, Drain Current (A) 400
VGS=20V VGS=10V
3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 200 ID, DC Drain Current (A)
Normalized to VGS=10V @ 74.5A
160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (C) 150
APT website - http://www.advancedpower.com
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APTM20UM09S - Rev 1 May, 2004
APTM20UM09S
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1000 1 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
limited by RDSon
ON resistance vs Temperature
VGS=10V ID= 195A
1000 ID, Drain Current (A)
100s
100 1ms 10ms 10 Single pulse TJ=150C DC line
1
10
100
1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=195A 10 TJ=25C V =100V
DS
VGS, Gate to Source Voltage (V)
8 6 4 2 0 0 60 120
VDS=160V
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
180
240
Gate Charge (nC)
APT website - http://www.advancedpower.com
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APTM20UM09S - Rev 1 May, 2004
APTM20UM09S
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 50 100 150 200 250 300 350 ID, Drain Current (A) Switching Energy vs Current
VDS=133V RG=1.2 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=1.2 TJ=125C L=100H
td(off) tr and tf (ns)
120 100 80 60 40 20 0 50
tf
tr
td(on)
100
150
200
250
300
350
ID, Drain Current (A) Switching Energy vs Gate Resistance 3500 Switching Energy (J) 3000 2500 2000 Eon 1500 1000
VDS=133V ID=195A TJ=125C L=100H
3000 2500
Eon and Eoff (J)
VDS=133V RG=1.2 TJ=125C L=100H
Eon
2000 1500 1000 500 0
Eoff
Eoff
50
100
150
200
250
300
350
0
2
4
6
8
10
12
14
ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 20 40 60 80 100 120 140 160 180 ID, Drain Current (A)
VDS=133V D=50% RG=1.2 TJ=125C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 10000
IDR, Reverse Drain Current (A)
400
1000 TJ=150C 100 TJ=25C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM20UM09S - Rev 1 May, 2004

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