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APTC60HM35T3G Full - Bridge Super Junction MOSFET VDSS = 600V RDSon = 35m max @ Tj = 25C ID = 72A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies 11 22 19 Q2 23 8 Q4 7 10 Power Module 13 14 Q1 Q3 18 Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 26 4 3 29 15 30 31 R1 32 16 27 * * * * 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC60HM35T3G - Rev 1 Max ratings 600 72 54 200 20 35 416 20 1 1800 Unit V A V m W A July, 2006 APTC60HM35T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25C Tj = 125C 2.1 Typ VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = 20 V, VDS = 0V 3 Max 40 375 35 3.9 150 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 72A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Min Typ 14 5.13 0.42 518 58 222 21 30 283 84 1340 1960 2192 2412 Max Unit nF nC ns J J Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C Min Typ 72 54 Max Unit A VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/s Tj = 25C Tj = 25C 580 46 1.2 6 V V/ns ns C July, 2006 2-6 APTC60HM35T3G - Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 72A di/dt 200A/s VR VDSS Tj 150C www.microsemi.com APTC60HM35T3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.30 150 125 100 4.7 110 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTC60HM35T3G - Rev 1 July, 2006 17 28 APTC60HM35T3G Typical Performance Curve 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 0 280 V GS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V Transfert Characteristics 240 200 160 120 80 40 0 0 T J=125C TJ=25C T J=-55C VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle ID, Drain Current (A) 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 25 I D, Drain Current (A) 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 I D, Drain Current (A) I D, DC Drain Current (A) Normalized to VGS=10V @ 36A VGS=10V DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 July, 2006 4-6 APTC60HM35T3G - Rev 1 VGS =20V 50 75 100 125 TC, Case Temperature (C) 150 www.microsemi.com APTC60HM35T3G RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area V GS=10V ID= 72A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) 100 limited by RDSon 100 s 10 Single pulse TJ=150C TC=25C 1 10 100 1 ms 10 ms 1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 July, 2006 10000 ID=72A TJ=25C V DS=120V VDS=300V V DS =480V Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 5-6 APTC60HM35T3G - Rev 1 APTC60HM35T3G 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) Rise and Fall times vs Current VDS=400V RG=2.5 T J=125C L=100H 100 tr and t f (ns) 250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 Switching Energy (mJ) VDS=400V RG=2.5 TJ=125C L=100H td(on) VDS=400V RG=2.5 TJ=125C L=100H tf 80 60 40 20 0 0 tr 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 8 6 4 2 0 VDS=400V ID=72A T J=125C L=100H Switching Energy (mJ) Eoff Eon Eoff Eon 20 40 60 80 100 ID, Drain Current (A) 120 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 T J=150C Operating Frequency vs Drain Current 140 120 Frequency (kHz) ZCS ZVS 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) VDS=400V D=50% RG=2.5 TJ=125C TC=75C I DR, Reverse Drain Current (A) 100 TJ=25C 10 hard switching 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 APTC60HM35T3G - Rev 1 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 |
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