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| AOU404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU404 is Pb-free (meets ROHS & Sony 259 specifications). AOU404L is a Green Product ordering option. AOU404 and AOU404L are electrically identical. TO-251 D Top View Drain Connected to Tab G S G D S Features VDS (V) = 75V ID = 10 A (VGS = 20V) RDS(ON) < 130 m (VGS = 20V) @ 5A RDS(ON) < 140 m (VGS = 10V) RDS(ON) < 165 m (VGS = 4.5V) Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 75 25 10 10 20 10 15 20 10 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 115 4.5 Max 140 7.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU404 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=10mA, VGS=0V VDS=60V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=20V, ID=5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=10V, ID=5A VGS=4.5V, ID=2A gFS VSD IS Forward Transconductance VDS=5V, ID=10A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 1 20 100 180 105 120 9 0.79 1 10 293 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 51 20 2.2 5.2 VGS=10V, VDS=37.5V, ID=5A 2.46 1 1.34 4.6 VGS=10V, VDS=37.5V, RL=7.5, RGEN=3 IF=5A, dI/dt=100A/s 2.3 14.7 1.7 25 27 30 3 6.5 3.5 350 130 220 140 165 2.4 Min 75 1 5 100 3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 4.5V 10 VGS=4V 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 220 Normalized On-Resistance 200 180 RDS(ON) (m) 160 140 120 100 80 0 2 4 6 8 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=5A 260 220 RDS(ON) (m) 180 140 25C 100 60 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0E+00 1.0E-01 IS (A) 125C 1.0E-02 1.0E-03 25C ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 VGS=20V VGS=4.5V 2.2 2 1.8 1.6 VGS=4.5V, 2A 1.4 1.2 1 VGS=20V, 5A VGS=10V, 5A 2 7V 5V ID(A) 6V 8 VDS=5V 10 6 125C 4 25C 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V 125C Alpha & Omega Semiconductor, Ltd. AOU404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=37.5V ID=5A Capacitance (pF) 400 350 300 250 200 150 Coss 100 50 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=175C, TA=25C 10s 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Ciss 8 VGS (Volts) 6 4 2 200 160 Power (W) TJ(Max)=175C TA=25C ID (Amps) R 10.0 DS(ON) limited 1ms 100s 120 80 40 0 0.0001 10ms 1.0 DC 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7.5C/W 1 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 ID(A), Peak Avalanche Current Power Dissipation (W) 10 8 6 4 2 0 0.00001 TA=25C 25 tA = L ID BV - VDD 20 15 10 5 0 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 12 10 Current rating ID(A) 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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