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AOB436 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications). AOB436L is a Green Product ordering option. AOB436 and AOB436L are electrically identical.
TO-263 D2-PAK
Features
VDS (V) = 25V ID = 55A (VGS = 10V) RDS(ON) < 7 m (VGS = 10V) RDS(ON) < 11 m (VGS = 4.5V) 193 18
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current
C C C
Maximum 25 20 55 55 150 30 45 50 25 3 2.1 -55 to 175
Units V V A A mJ W W C
TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C
Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 10 41 1.9
Max 15 50 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOB436
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C VGS=4.5V, ID=30A gFS VSD IS Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 1 100 5.7 8 9 53 0.73 1 50 1850 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 472 275 0.86 34 VGS=10V, VDS=12.5V, ID=30A 16.8 7 8.5 7.5 VGS=10V, VDS=12.5V, RL=0.39, RGEN=3 IF=30A, dI/dt=100A/s 33 25 22 32 19 38 1.5 40 2220 11 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC 7 m 1.8 Min 25 1 5 100 3 Typ Max Units V A nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 80 4.5V ID (A) 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3.5 ID(A) 4.0V 6V 5V 10V 60 50 40 30 20 10 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS=5V
4.63 494 692
593 830
12 10 RDS(ON) (m) 8 6 4 2 0 10 20 30 40 50 60 Normalized On-Resistance VGS=4.5V
1.8 1.6
193 18
VGS=10V, 30A 1.4 1.2 1 0.8 0 25 50 75
VGS=4.5V, 30A
VGS=10V
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
59 100 142
125
150
175
16 14 RDS(ON) (m) 12 10 8 6 4 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=30A 125C
100 10 1 IS (A) 0.1 0.01 0.001 0.0001 0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 VDS=12.5V ID=30A 3000 2500 Capacitance (pF) Ciss 2000 1500 1000 500 Crss 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss
4.63 494 692 593 830
193 18
TJ(Max)=175C, TA=25C 10s Power (W) 100s
200 160 120 80 40 0 0.0001
TJ(Max)=175C TA=25C
100 ID (Amps)
10 RDS(ON) limited
DC
1ms
1
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.001
0.01
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
59 0.1 142
1
10
10 ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOB436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 ID(A), Peak Avalanche Current 50 40 30 20 10 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C 60
Power Dissipation (W)
tA =
L ID BV - VDD
50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
4.63 494 692 593 830
60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
50 40
Power (W)
193 18
TA=25C
30 20 10 0 0.01
0.1
1
59 142 10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance Single Pulse 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W PD Ton
0.01
T 100 1000
0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.

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