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| 20V P-Channel Power MOSFET General Description The AAT7157 low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTechTM's TrenchDMOSTM product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7157 is designed for use as a load switch in battery powered applications and protection in battery packs. AAT7157 Features * * * VDS(MAX) = -20V ID(MAX) 1 = -5.8A @ 25C Low RDS(ON): * 36 m @ VGS = -4.5V * 62 m @ VGS = -2.5V Dual SOP-8L Package Applications * * Battery Packs Battery-powered portable equipment D1 8 Top View D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25C unless otherwise noted) Value -20 12 5.8 4.6 24 -1.5 2.0 1.25 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TA = 25C TA = 70C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25C TA = 70C W C Operating Junction and Storage Temperature Range Thermal Characteristics Symbol RJA RJA2 RJF Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<10 seconds Typical Junction-to-Foot 1 1 1 Value 100 62.5 35 Units C/W 7157.2004.04.1.0 1 20V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions Min -20 29 49 -24 -0.6 100 -1 -5 12 14 2.3 5.5 10 37 36 52 -1.5 -1.5 36 62 AAT7157 Typ Max Units V m A V nA A S DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250A VGS=-4.5V, ID=-5.8A RDS(ON) Drain-Source ON-Resistance 2 VGS=-2.5V, ID=-4.4A ID(ON) On-State Drain Current 2 VGS=-4.5V, VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=-250A IGSS Gate-Body Leakage Current VGS=12V, VDS=0V VGS=0V, VDS=-20V IDSS Drain Source Leakage Current VGS=0V, VDS=-16V, TJ=70C 3 gfs Forward Transconductance 2 VDS=-5V, ID=-5.8A 3 Dynamic Characteristics QG Total Gate Charge VDS=-15V, RD=2.6, VGS=-4.5V QGS Gate-Source Charge VDS=-15V, RD=2.6, VGS=-4.5V QGD Gate-Drain Charge VDS=-15V, RD=2.6, VGS=-4.5V tD(ON) Turn-ON Delay VDS=-15V, RD=2.6, VGS=-4.5V, tR Turn-ON Rise Time VDS=-15V, RD=2.6, VGS=-4.5V, tD(OFF) Turn-OFF Delay VDS=-15V, RD=2.6, VGS=-4.5V, tF Turn-OFF Fall Time VDS=-15V, RD=2.6, VGS=-4.5V, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=-5.8A IS Continuous Diode Current 1 nC RG=6 RG=6 RG=6 RG=6 ns V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design, however RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 s Note 3: Guaranteed by design. Not subject to production testing. 2 7157.2004.04.1.0 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Output Characteristics 24 AAT7157 Transfer Characteristics 24 5V 4.5V 4V 3.5V 3V 18 VD=VG -55C 25C 125C 18 2.5V IDS (A) ID (A) 2V 6 12 12 6 1.5V 0 0 0.5 1 1.5 2 2.5 3 0 0 1 2 3 4 5 VDS (V) VGS (V) On-Resistance vs. Drain Current 70 60 50 120 On-Resistance vs. Gate to Source Voltage ID = 5.8A 100 VGS = 2.5 V RDS(ON) (m) 80 60 40 20 0 RDS(ON) (m) 40 30 20 10 0 0 4 8 12 16 20 24 VGS = 4.5 V 0 1 2 3 4 5 ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.4 1.3 0.5 Threshold Voltage ID = 250A Normalized RDS(ON) VGS(th) Variance (V) VGS = 4.5V ID = 6.5A 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (C) TJ (C) 7157.2004.04.1.0 3 20V P-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Gate Charge 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 0.1 0 0.2 0.4 0.6 0.8 1 1.2 100 AAT7157 Source-Drain Diode Forward Voltage VD=15V ID=5.8A 10 VGS (V) TJ = 150C TJ = 25C IS (A) 1 QG, Charge (nC) VSD (V) Capacitance 2000 1600 Capacitance (pF) 1200 800 Ciss Coss 400 Crss 0 0 5 10 15 20 VDS (V) 4 7157.2004.04.1.0 20V P-Channel Power MOSFET Ordering Information Package SOP-8 Marking 7157 Part Number (Tape and Reel) AAT7157IAS-T1 AAT7157 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information SOP-8 3.90 0.10 4.90 0.10 6.00 0.20 0.375 0.125 1.55 0.20 45 0.175 0.075 4 4 0.235 0.045 0.825 0.445 0.42 0.09 x 8 1.27 BSC All dimensions in millimeters. 7157.2004.04.1.0 5 20V P-Channel Power MOSFET AAT7157 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 7157.2004.04.1.0 |
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