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| SO642 SMALL SIGNAL NPN TRANSISTOR Type SO 642 s Marking N91 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 300 300 6 0.1 0.3 310 -65 to 150 150 Unit V V V A A mW o o C C 1/4 SO642 THERMAL DATA R t hj-amb * R th j-SR * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 450 320 o o C/W C/W * Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 200 V I C = 100 A 300 Min. Typ . Max. 100 Un it nA V V ( BR)CBO Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = 1 mA 300 V I E = 100 A 6 V V CE(sat ) V BE(s at) h FE I C = 20 mA I C = 20 mA I C = 1 mA I C = 10 mA I C = 30 mA V CE = 20 V I B = 2 mA I B = 2 mA VCE = 10 V V CE = 10 V V CE = 10 V f = 1MHz 25 40 40 50 0.5 0.9 V V fT C CB Transition F requency Collector Base Capacitance I C = 10 mA VCE = 20 V f = 50 MHz MHz 3 pF Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 SO642 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 SO642 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4 |
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