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| RB481Y Diodes Schottky barrier diode RB481Y Applications Low current rectification External dimensions (Unit : mm) 0.45 Land size figure (Unit : mm) 0.5 1.60.1 0.220.05 Features 1) Ultra Small power mold type. (EMD4) 2) Low VF 3) High reliability. 0.130.05 (3) (4) 1.20.1 1.60.1 1.0 00.1 EMD4 (1) 0.5 1.00.1 0.5 (2) Structure 0.50.05 Construction Silicon epitaxial planar ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm) 4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1 3.50.05 1.650.1 5.50.2 8.00.2 1.55 0.80.1 00.1 0.650.1 1.650.1 1PIN 4.00.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1) Rating of per diode Electrical characteristics (Ta=25C) Parameter Symbol VF1 VF2 Forward voltage VF3 Reverse current IR Symbol VR Io IFSM Tj Tstg Limits 30 100 1 125 -40 to +125 Unit V mA A Min. - Typ. - Max. 0.28 0.33 0.43 30 Unit V V V A Conditions IF=1mA IF=10mA IF=100mA VR=10V Rev.B 1.650.01 1/3 RB481Y Diodes Electrical characteristic curves (Ta=25C) 1000 100000 Ta=125 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=75 10 1 0.1 0.01 0.001 0 100 200 300 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS VF 360 500 Ta=-25 Ta=25 1000 100 10 1 0.1 0.01 0 Ta=75 Ta=25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 100 Ta=125 10000 10 Ta=-25 10 20 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 50 16 FORWARD VOLTAGE:VF(mV) 40 35 30 25 20 15 10 5 0 AVE:4.775uA 340 330 320 AVE:340.2mV 310 VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 350 REVERSE CURRENT:VR(uA) Ta=25 IF=100mA n=30pcs 45 Ta=25 VR=10V n=30pcs 15 Ta=25 f=1MHz VR=0V n=10pcs 14 13 AVE:14.33pF 12 IR DISPERSION MAP Ct DISPERSION MAP 20 10 10 Ifsm 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms Ifsm t 10 5 5 5 AVE:5.60A 0 0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 0.3 Rth(j-a) Per chip 0.5 Per chip 0.4 FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 100 0.2 D=1/2 Sin(180) 0.1 DC REVERSE POWER DISSIPATIONPR (w) 0.3 0.2 0.1 0 DC Sin(180) D=1/2 Mounted on epoxy board IM=10mA IF=100mA 1ms time 300us 10 0.001 10 TIME:(s) Rth-t CHARACTERISTICS 0.1 1000 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-P CHARACTERISTICS 0 10 20 REVERSE VOLTAGEVR(V) VR-PR CHARACTERISTICS 30 Rev.B 2/3 RB481Y Diodes 0.5 0.4 0.3 Per diode 0A 0V t Io 0.5 0.4 0.3 0.2 0.1 0 Per diode DC AVERAGE RECTIFIED FORWARD CURRENT Io(A) DC T D=1/2 AVERAGE RECTIFIED FORWARD CURRENT Io(A) VR D=t/T VR=15V Tj=125 0A 0V t T Io VR D=t/T VR=15V Tj=125 D=1/2 0.2 0.1 0 0 25 50 75 100 AMBIENT TEMPERATURETa() Derating Curve 125 Sin(180) Sin(180) 0 25 50 75 100 125 CASE TEMPARATURETc() Derating Curve Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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