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| FSX027WF General Purpose GaAs FET FEATURES * * * * Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT TSTG TCH Tc = 25C Condition Rating 12 -5 1.5 -65 to 175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS gm Vp VGSO NF Gas P1dB VDS = 3V, IDS = 30mA f = 8GHz Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 54mA VDS = 3V, IDS = 5.4mA IGS = -5.4A Min. 70 -0.7 -5.0 Limit Typ. Max. 110 100 -1.2 2.5 9.5 24.5 24.5 23.5 14.0 10.0 6.5 70 150 -1.7 100 Unit mA mS V V dB dB dBm dBm dBm dB dB dB C/W Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Thermal Resistance CASE STYLE: WF G1dB Rth f = 4GHz VDS = 8V, f = 8GHz 23.5 IDS = 0.7IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 9.0 IDS = 0.7IDSS f = 12GHz Channel to Case - G.C.P.: Gain Compression Point Edition 1.2 July 1999 1 FSX027WF General Purpose GaAs FET POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTA Total Power Dissipation (W) 1.5 1.2 0.9 0.6 0.3 140 Drain Current (mA) 120 100 80 60 40 20 2 4 6 VGS = 0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V 8 10 0 50 100 150 200 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 26 VDS = 8V IDS = 0.5 IDSS Pout f=4GHz 8GHz 12GHz P 1dB vs. VDS f = 8GHz IDS = 0.7 IDSS Output Power (dBm) 24 22 20 18 16 14 12 10 8 25 60 f=4GHz 8GHz add 12GHz 30 20 10 0 -6 -4 -2 0 24 6 8 10 12 14 16 18 20 add (%) 50 40 P 1dB (dBm) 23 21 19 17 4 5 6 7 8 Input Power (dBm) Drain-Source Voltage (V) FSX027WF General Purpose GaAs FET +j50 +j25 15GHz S11 S22 +j100 +90 S21 S12 10 14 +j10 12 0 50 100 2 12 14 250 15GHz 1GHz +j250 1GHz 8 4 6 26 8 4 8 10 8 6 4 2 SCALE FOR |S21| 15GHz 1GHz 10 12 12 .04 14 1GHz 6 10 180 0 -j10 4 8 6 4 2 SCALE FOR |S12| -j250 .08 .12 14 15GHz 1GHz -j25 2 -j50 -j100 .16 -90 FREQUENCY (MHZ) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 S11 MAG .942 .852 .782 .745 .710 .683 .656 .638 .618 .601 .592 .591 .600 .582 .499 ANG -53.2 -91.2 -116.0 -135.8 -155.2 -176.8 -159.9 139.7 119.4 97.2 73.4 51.8 33.6 19.1 -0.7 S-PARAMETERS VDS =8V, IDS = 75mA S21 S12 MAG ANG MAG ANG 6.773 5.211 3.993 3.335 2.994 2.747 2.532 2.323 2.089 1.838 1.639 1.646 1.401 1.409 1.246 142.1 114.2 94.6 80.7 66.2 51.7 36.2 20.2 1.4 -14.7 -30.5 -48.3 -67.1 -82.1 -103.6 .021 .030 .033 .035 .037 .040 .048 .054 .057 .065 .078 .087 .093 .117 .139 62.8 47.6 43.1 41.5 44.2 41.3 38.2 26.4 17.1 3.9 -5.1 -28.1 -31.1 -38.7 -53.2 S22 MAG .651 .628 .635 .651 .652 .642 .634 .638 .636 .642 .646 .647 .651 .668 .705 ANG -25.8 -43.7 -56.5 -66.8 -73.6 -83.7 -97.6 -115.9 -134.5 -150.7 -168.5 172.6 155.2 139.4 121.8 Download S-Parameters, click here 3 FSX027WF General Purpose GaAs FET Case Style "WF" Metal-Ceramic Hermetic Package 1.0 Min. (0.039) 0.10.05 (0.004) 1 2.50.15 (0.098) 2-o1.60.01 (0.063) 4 1.0 Min. (0.039) 3 0.6 (0.024) 2 2.5 (0.098) 2.5 Max. (0.098) 1: Gate 2: Source (Flange) 6.10.1 (0.240) 8.50.2 (0.335) 0.80.1 (0.031) 3: Drain 4: Source (Flange) Unit: mm (Inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 |
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