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Composite Transistors
XN06534 (XN6534)
Silicon NPN epitaxial planar type
For high-frequency amplification
4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
Unit: mm
0.16+0.10 -0.06
1.50+0.25 -0.05
0.30+0.10 -0.05 0.50+0.10 -0.05
Basic Part Number
* 2SC2404 x 2
10
1.1+0.2 -0.1
(0.65)
* Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half
3
2
1
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 3 15 200 150 -55 to +150 Unit V V V mA mW C C
1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74
0 to 0.1
Marking Symbol: 7F Internal Connection
4 5 6
1.1+0.3 -0.1
4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package
Tr2 3 2
Tr1
1
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio hFE ratio * Transition frequency Reverse transfer capacitance (Common emitter) Power gain Noise figure Symbol VCBO VEBO VBE hFE hFE(Small
/Large)
Conditions IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA, f = 200 MHz VCB = 6 V, IE = -1 mA, f = 10.7 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz
Min 30 3
Typ
Max
Unit V V
720 40 0.50 450 0.99 650 0.8 24 3.3 1.0 260
mV MHz pF dB dB
fT Cre GP NF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004 SJJ00109BED
0.40.2
Features
2.8+0.2 -0.3 5
1
XN06534
PT Ta
240
IC VCE
12 IB = 100 A 80 A 60 A 6 40 A Ta = 25C
12
IC I B
VCE = 6 V Ta = 25C 10
Total power dissipation PT (mW)
200
10
160
Collector current IC (mA)
Collector current IC (mA)
8
8
120
6
80
4
4
40
20 A 2
2
0 0 40 80 120 160
0
0
0
6
12
18
0
40
80
120
160
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (A)
IC VBE
VCE = 6 V 25C 25 -25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 360
hFE IC
VCE = 6 V
30
Collector current IC (mA)
Ta = 75C
10
20
Forward current transfer ratio hFE
300
240 Ta = 75C 25C 120 -25C
15
1
180
10
25C 0.1 Ta = 75C -25C 0.01 0.1
5
60
0
0
0.4
0.8
1.2
1.6
2.0
1
10
100
0 0.1
1
10
100
Base-emitter voltage VBE
(V)
Collector current IC (mA)
Collector current IC (mA)
fT I E
1 200 120 VCB = 6 V Ta = 25C
Zrb IE
Reverse transfer capacitance Cre (pF) (Common emitter)
VCB = 6 V f = 2 MHz Ta = 25C
2.4
Cre VCE
IC = 1 mA f = 10.7 MHz Ta = 25C
Reverse transfer impedance Zrb ()
Transition frequency fT (MHz)
1 000
100
2.0
800
80
1.6
600
60
1.2
400
40
0.8
200
20
0.4
0 - 0.1
-1
-10
-100
0 - 0.1
-1
-10
0 0.1
1
10
100
Emitter current IE (mA)
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
2
SJJ00109BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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