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FJV42 NPN High Voltage Transistor
March 2007
FJV42
NPN High Voltage Transistor
3
2 1 SOT-23 Marking: 1DF
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25C unless otherwise noted
Parameter
Value
350 350 6 500 -55~150 350
Units
V V V mA C mW
TSTG
PC
Storage Temperature Range
Collector Power Dissipation
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
RTH(j-a)
Parameter
Thermal Resistance, Junction to Ambiet
Value
357
Units
C/W
Electrical Characteristics
Symbol
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE
TC = 25C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current DC Current Gain*
Test Condition
IC = 5.0 mA, IB = 0 IC = 100 uA, IE = 0 IE = 100 uA, IC = 0 VCB = 200 V, IE = 0 VEB = 5.0 V, IC = 0 IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V IC = 20 mA, IB = 2.0 mA IC = 20 mA, IB = 2.0 mA IC = 10 mA, VCE = 20V, f =100 MHz VCB = 20 V, IE = 0, f = 1.0 MHz
MIN
350 350 6
MAX
Units
V V V
0.1 0.1 25 40 40 0.5 0.9 50 3
uA uA
VCE(sat) VBE(sat) fT Ccb
Collector-Emitter Saturation Voltage * Base-Emitter Breakdown Voltage * Current Gain - Bandwidth Product
Output Capacitance
V V MHz pF
* Pulse Test: PW300s, Duty Cycle2%
(c)2007 Fairchild Semiconductor Corporation
1
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FJV42 Rev. A
FJV42 NPN High Voltage Transistor
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
IC = 10 IB
hFE, DC CURRENT GAIN
VCE = 10V
1
VBE(sat)
100
0.1
VCE(sat)
10 1 10 100
0.01 1 10 100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
100
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IE = 0 f = 1MHz
120
100
Ccb [pF], CAPACITANCE
VCE = 20V
80
10
60
40
20
1 0.1
0 1 10 100
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
2 FJV42 Rev. A
www.fairchildsemi.com
FJV42 NPN High Voltage Transistor
Package Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 0.03 0.96~1.14 2.90 0.10
0.12 -0.023
+0.05
0.95 0.03 0.95 0.03 1.90 0.03 0.508REF
0.97REF
Dimensions in Millimeters
3 FJV42 Rev. A
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FJV42 NPN High Voltage Transistor FJV42 NPN High Voltage Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification
Advance Information Preliminary
Product Status
Formative or In Design First Production
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Rev. I23
No Identification Needed
Full Production
Obsolete
Not In Production
4 FJV42 Rev. A
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