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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG03DBVSC TVS Diode for ESD Protection in Portable Electronics FEATURES 50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. 2 CATHODE MARK 1 D C B A DIM A B C D E F E MILLIMETERS 1.4 0.05 1.0 0.05 0.6 0.05 0.28 0.03 0.5 0.05 0.12 0.03 Low clamping voltage. Low leakage current. 1. ANODE 2. ANODE F APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA's) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. VSC Marking 2 SYMBOL Tj Tstg RATING -55 150 -55 150 2 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Junction Temperature Storage Temperature ) UNIT 3B 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Zener Voltage Reverse Leakage Current Junction Capacitance ) TEST CONDITION It=1mA VRWM=3.3V VR=0V, f=1MHz MIN. 4.2 TYP. MAX. 3.3 6.2 20 25 UNIT V V A pF SYMBOL VRWM VZ IR CJ 2005. 6. 1 Revision No : 0 1/1 |
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