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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.TM High Energy Power FET
P-Channel Enhancement-Mode Silicon Gate
This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Capability Specified at Elevated Temperature * Low Stored Gate Charge for Efficient Switching * Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor-Absorbs High Energy in the Avalanche Mode * Source-to-Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Single Pulse (tp 50 s) Drain Current -- Continuous @ TC = 25C Drain Current -- Continuous @ TC = 100C Drain Current -- Single Pulse (tp 10 s) Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TC = 25C, when mounted to minimum recommended pad size Operating and Storage Temperature Range D
MTD1P50E
Motorola Preferred Device
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15
(R)
G S Symbol VDSS VDGR VGS VGSM ID ID IDM PD
CASE 369A-13, Style 2 DPAK Surface Mount
Value 500 500 20 40 1.0 0.8 4.0 50 0.4 1.75 - 55 to 150
Unit Vdc Vdc Vdc Adc Apk Watts W/C Watts C
TJ, Tstg
UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (TJ < 150C)
Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25C (VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25 ) EAS 45 mJ
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. RJC RJA RJA TL 2.5 100 71.4 260 C/W
C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E-FET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
(c) Motorola TMOS Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MTD1P50E
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS* Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 0.5 Adc) Drain-to-Source On-Voltage (VGS = 10 Vdc) (ID = 1.0 Adc) (ID = 0.5 Adc, TJ = 125C) Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS* Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 400 Vdc, ID = 1.0 Adc, VGS = 10 Vdc) (VDS = 250 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 1.0 Adc, VGS = 0 Vdc) (IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125C) VSD -- -- trr (IS = 1.0 Adc, dIS/dt = 100 A/s) Reverse Recovery Stored Charge * Pulse Test: Pulse Width 300 s, Duty Cycle 2%. ta tb QRR -- -- -- -- 2.0 TBD TBD TBD TBD TBD 3.5 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- TBD TBD TBD TBD TBD TBD pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 0.4 -- -- 0.6 18 15.8 -- mhos -- 3.1 TBD 12 4.0 -- 15 Vdc mV/C Ohms Vdc V(BR)DSS 500 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- TBD -- -- Vdc V/C Adc Symbol Min Typ Max Unit
Reverse Recovery Time
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Motorola TMOS Power MOSFET Transistor Device Data
MTD1P50E
PACKAGE DIMENSIONS
-T- B V R C E
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 ---
S
A K F L D G
2 PL
Z U
J H 0.13 (0.005) T
STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN
DIM A B C D E F G H J K L R S U V Z
M
CASE 369A-13 ISSUE W
Motorola TMOS Power MOSFET Transistor Device Data
3
MTD1P50E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
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Motorola TMOS Power MOSFET Transistor Device Data MTD1P50E/D
*MTD1P50E/D*

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