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MIG400J2CSB1W
MITSUBISHI SEMICONDUCTOR
MIG400J2CSB1W (600V/400A 2in1)
High Power Switching Applications Motor Control Applications
* * * * * * Integrates inverter power circuits and control circuits (IGBT drive unit, units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. The electrodes are isolated from the case. Low thermal resistance VCE (sat) = 1.9 V (typ.) UL recognized: File No.E87989 Weight: 278 g (typ.)
Equivalent Circuit
1 2 3 4 5 6 7 8
FO GND IN VD
FO GND IN VD
GND VS
OUT
GND VS
OUT
E2 C2/E1 1. 5. FO (L) FO (H) 2. 6. GND (L) GND (H) 3. 7. IN (L) IN (H)
C1
4. 8.
VD (L) VD (H)
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Package Dimensions
Unit: mm
1. 5.
FO (L) FO (H)
2. 6.
GND (L) GND (H)
3. 7.
IN (L) IN (H)
4. 8.
VD (L) VD (H)
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Signal Terminal Layout
Unit: mm
1. 5.
FO (L) FO (H)
2. 6.
GND (L) GND (H)
3. 7.
IN (L) IN (H)
4. 8.
VD (L) VD (H)
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Maximum Ratings (Tj = 25C)
Stage Supply voltage Collector-emitter voltage Inverter Collector current Forward current Collector power dissipation Junction temperature Control supply voltage Control Input voltage Fault output voltage Fault output current Operating temperature Module Storage temperature Isolation voltage Screw torque AC 1 min M5 Tc = 25C, DC Tc = 25C, DC Tc = 25C VD-GND terminal IN-GND terminal FO-GND terminal FO sink current Characteristics Condition P-N power terminal Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO Rating 450 600 400 400 2190 150 20 20 20 10 -20~+100 -40~+125 2500 3 Unit V V A A W C V V V mA C C V Nm

Tc Tstg VISO
Electrical Characteristics
1. Inverter stage
Characteristics Collector cut-off current Symbol ICEX Test Condition VCE = 600 V VD = 15 V IC = 400 A VIN = 15 V 0 V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1.6 VCC = 300 V, IC = 400 A VD = 15 V, VIN = 15 V 0 V Tj = 25C, Inductive load (Note 1) Typ. 1.9 2.1 2.3 2.0 0.4 0.2 1.5 0.25 Max 1 10 2.3 2.7 3.0 2.5 s V V Unit mA
Collector-emitter saturation voltage Forward voltage
VCE (sat) VF ton tc (on)
IF = 400 A, Tj = 25C
Switching time
trr toff tc (off)
Note 1: Switching time test circuit & timing chart
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2. Control stage (Tj = 25C)
Characteristics Control circuit current Input on signal voltage Input off signal voltage Protection Fault output current Normal Overcurrent protection trip Inverter level Short-circuit protection trip level Overcurrent cut-off time Overtemperature protection Control supply under voltage protection Fault output pulse width Trip level Reset level Trip level Reset level Inverter High side Low side Symbol ID (H) ID (L) VIN (on) VIN (off) IFO (on) IFO (off) OC SC toff (OC) OT OTr UV UVr tFO VD = 15 V VD = 15 V Test Condition Min 1.4 2.2 640 640 110 11.0 12.0 1 Typ. 13 13 1.6 2.5 10 5 118 98 12.0 12.5 2 Max 17 17 1.8 2.8 12 mA 0.1 125 12.5 13.0 3 ms A A s C V Unit mA
VD = 15 V
VD = 15 V VD = 15 V, Tj < 125C = VD = 15 V, Tj < 125C = VD = 15 V Case temperature
V
3. Thermal resistance (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) IGBT FRD Compound is applied Test Condition Min Typ. 0.017 Max 0.057 0.130 C/W Unit C/W
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Switching Time Test Circuit
Intelligent power module TLP559 (IGM) VD 0.1 F 15 k OUT IN 15 V 68 F GND VS C1
GND C2/E1 VCC
VD IF = 16 mA PG 15 V 68 F GND 0.1 F 15 k OUT IN VS E2
GND
Timing Chart
Input pulse 15 V VIN Waveform 0
2.5 V
1.6 V
90% Irr IC Waveform Irr 90% trr 20% Irr
VCE Waveform
10% toff
10% tc (off)
10% ton
10% tc (on)
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4. Recommended conditions for application
Characteristics Supply voltage Control supply voltage Carrier frequency Dead time Symbol VCC VD fc tdead Test Condition P-N power terminal VD-GND signal terminal PWM control Switching time test circuit (Note 2) Min 13.5 5 Typ. 300 15 Max 400 16.5 20 Unit V V kHz s
Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above.
Dead Time Timing Chart
15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead
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IC - VCE
800 700 800 700
IC - VCE
VD = 17 V
VD = 17 V VD = 13 V
(A)
600 500 400 300 200 100 0 0
(A) IC
VD = 13 V VD = 15 V
600 500 400 300 200 100 0 0
IC
Collector current
Common emitter Tj = 25C 0.5 1 1.5 2 2.5 3 3.5 4
Collector current
VD = 15 V
Common emitter Tj = 125C 0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Switching time - IC
10 10
Switching time - IC
ton
ton
(s)
1
toff tc (on) tc (off)
(s)
toff 1 tc (on) tc (off) 0.1 Tj = 125C VCC = 300 V VD = 15 V L-LOAD 0 100 200 300 400 500
Switching time
0.1 Tj = 25C VCC = 300 V VD = 15 V L-LOAD 0 100 200 300 400 500
0.01
Switching time
0.01
Collector current IC
(A)
Collector current IC
(A)
IF - VF
800 700 1000
trr, Irr - IF
Peak reverse recovery current Irr (A) Reverse recovery time trr (x 10 ns)
Irr
(A)
600 500 400 300 200 Common cathode 100 0 0 : Tj = 25C : Tj = 125C 0.5 1 1.5 2 2.5 3 3.5 4
Forward current IF
100
10 Common cathode
trr
: Tj = 25C : Tj = 125C 1 0 100 200 300 400 500
Forward voltage
VF (V)
Forward current
IF (A)
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OC - Tc
900 80
ID - fc
(A)
800 700 600 500 400 300 200 100 VD = 15 V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25
(mA) Control circuit current ID
OC
Over current protection trip level
60
40
20
VD = 15 V Tj = 25C
Case temperature
Tc
(C)
Carrier frequency
fc (kHz)
Reverse bias SOA
OC 640
Rth (t) - tw
Rth (t) (C/W)
1
720
0.3 Diode stage 0.1 0.03 0.01
(A) IC
560 480 400 320 240 160 80 0 0 100 200 300 400 500 600 700 Tj < 125C = VD = 15 V
Transient thermal resistance
Collector current
Transistor stage
0.003 0.001 Tc = 25C 0.0003 0.001 0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw (s)
Eon - IC
100 100
Eoff - IC
Eon (mJ)
10
Eoff (mJ) Turn off loss
10
Turn on loss
1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 0.1 0 100 200 300 400 500
1 VCC = 300 V VD = 15 V L-LOAD : Tj = 25C : Tj = 125C 0.1 0 100 200 300 400
Collector current IC (A)
Collector current IC (A)
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