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| Si6466ADQ Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 8.1 6.6 rDS(on) (W) 0.014 @ VGS = 4.5 V 0.020 @ VGS = 2.5 V D TrenchFETr Power MOSFET D 100% Rg Tested D TSSOP-8 D S S G 1 2 3 4 Top View Ordering Information: SI6466ADQ-T1 S* N-Channel MOSFET D 8D 7S 6S 5D * Source Pins 2, 3, 6 and 7 must be tied common. G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "8 8.1 6.6 30 1.35 1.5 1.0 Steady State Unit V 6.8 5.4 A 0.95 1.05 0.67 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71182 S-31725--Rev. B, 18-Aug-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 65 100 43 Maximum 83 120 52 Unit _C/W C/W 1 Si6466ADQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 8.1 A VGS = 2.5 V, ID = 6.6 A VDS = 10 V, ID = 8.1 A IS = 1.35 A, VGS = 0 V 20 0.011 0.017 30 0.65 1.1 0.014 0.020 W S V 0.45 "100 1 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.5 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 27 34 76 30 35 VDS = 10 V, VGS = 5 V, ID = 8.1 A 18 3.2 4 1.8 45 50 120 50 70 ns W 27 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2.5 V 30 Transfer Characteristics 24 I D - Drain Current (A) 24 2V I D - Drain Current (A) 18 18 12 12 TC = 125_C 6 25_C 0 0.0 - 55_C 1.5 2.0 2.5 6 1.5 V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0.5 1.0 VGS - Gate-to-Source Voltage (V) Document Number: 71182 S-31725--Rev. B, 18-Aug-03 www.vishay.com 2 Si6466ADQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 r DS(on) - On-Resistance ( W ) 3000 Capacitance 0.03 C - Capacitance (pF) 2400 Ciss 1800 0.02 VGS = 2.5 V VGS = 4.5 V 1200 Coss 0.01 600 Crss 0 4 0.00 0 6 12 18 24 30 0 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 8.1 A 4 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 0.4 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.1 A 3 2 1 r DS(on) - On-Resistance (W) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.05 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.04 I S - Source Current (A) 0.03 ID = 8.1 A 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71182 S-31725--Rev. B, 18-Aug-03 www.vishay.com 3 Si6466ADQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 100 Single Pulse Power, Junction-to-Ambient 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) - 0.0 80 60 - 0.2 40 - 0.4 20 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71182 S-31725--Rev. B, 18-Aug-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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