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AO4603 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony 259 specifications). AO4603L is a Green Product ordering option. AO4603 and AO4603L are electrically identical.
Features
n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -5.8A (VGS = -10V) RDS(ON) RDS(ON) < 55m (VGS=10V) < 35m (VGS = -10V) < 70m (VGS=4.5V) < 58m (VGS = -4.5V) < 110m (VGS = 2.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
G1 S1
SOIC-8 n-channel p-channel Max p-channel -30 20 -5.8 -4.9 -40 2 1.44 -55 to 150 W C A Units V V Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
12 4.7 4 30 2 1.44 -55 to 150
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 52 78 48 50 73 31
Max Units 62.5 C/W 110 C/W 50 C/W 62.5 110 35 C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4603
n-channel MOSFET Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=4A TJ=125C 55 83 8 0.8 70 110 1 2.5 390 54.5 41 3 0.6 1.38 4.34 3.3 1 21.7 2.1 12 6.3 0.6 10 45 55 1 Min 30 1 5 100 1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
VGS=4.5V, ID=3A VGS=2.5V, ID=2A VDS=5V, ID=4A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=4A
VGS=10V, VDS=15V, RL=3.75, RGEN=6 IF=4A, dI/dt=100A/s IF=4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS N-Channel
15 12 4.5V 9 ID (A) 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 125 VGS=2.5V RDS(ON) (m) 100 75 50 25 0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 1.0E+01 1.0E+00 150 RDS(ON) (m) ID=2A IS (A) 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 100 125C VGS=4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 2.5V ID(A) 6 4 125C VGS=2V 2 0 0 0.5 1 1.5 25C 2 2.5 3 3.5 10 10V 3V 8 VDS=5V
VGS(Volts) Figure 2: Transfer Characteristics
VGS=4.5V VGS=10V VGS=2.5V
VGS=10V
50
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS N-Channel
5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 600 VDS=15V ID=4A Capacitance (pF) 500 Ciss 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss
100.0
RDS(ON) limited
TJ(Max)=150C TA=25C 10s Power (W)
20
TJ(Max)=150C TA=25C
10.0 ID (Amps) 1ms
15
100s 0.1s 10ms
10
1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4603
p-channel MOSFET Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-10A -0.75 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 2.4 VGS=-10V, VDS=-15V, ID=-7.5A 4.5 9.3 7.6 VGS=-10V, VDS=-15V, RL=2, RGEN=3 IF=-7.5A, dI/dt=100A/s 5.2 21.6 8 20 8.8 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.2 40 29 40 39 63 38 -1.8 Min -30 -1 -5 100 -2.2 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-7.5A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in analication depends on depends on the user's specific board design. rating is based on the t 10s thermal 10s thermal resistance any a given application the user's specific board design. The current The current rating is based on the t resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS P-Channel
30 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 55 50 45 RDS(ON) (m) 40 35 30 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) -IS (A) 70 125C 60 50 40 1.0E-05 30 20 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C ID=-6A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 125C 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V VGS=-4.5V Normalized On-Resistance 1.4 1.6 ID=-6A VGS=-10V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -10V -6V -5V -4.5V 30 25 20 -ID(A) 15 10 5 125C 25C VDS=-5V
-4V
1.2
VGS=-4.5V
1
Alpha & Omega Semiconductor, Ltd.
AO4603
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS P-Channel
10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=-15V ID=-6A Capacitance (pF) 1250 Ciss 1000 750 500 Coss 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss
100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 10s 100s 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC
40 TJ(Max)=150C TA=25C 30 Power (W)
-ID (Amps)
10.0
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.

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