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| DATA SHEET 2N6315 2N6317 2N6316 2N6318 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6315 Series types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS (TC=25C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ,Tstg JC 2N6315 2N6317 60 60 5.0 7.0 15 2.0 90 -65 to +200 1.95 2N6316 2N6318 80 80 UNITS V V V A A A W C C/W ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted) SYMBOL ICBO ICEO ICEV ICEV IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE TEST CONDITIONS VCB= Rated VCBO VCE= 1/2 Rated VCEO VCE= Rated VCEO, VBE(OFF)=1.5V VCE= Rated VCEO, VBE(OFF)=1.5V, TC=150C VEB=5.0V IC=100mA IC=4.0A, IB=0.4A IC=7.0A, IB=1.75A IC=7.0A, IB=1.75A VCE=4.0V, IC=2.5A VCE=4.0V, IC=0.5A VCE=4.0V, IC=2.5A VCE=4.0V, IC=7.0A 2N6315 2N6317 MIN MAX 0.25 0.50 0.25 2.0 1.0 60 1.0 2.0 2.5 1.5 35 20 100 4.0 2N6316 2N6318 MIN MAX 0.25 0.50 0.25 2.0 1.0 80 1.0 2.0 2.5 1.5 35 20 100 4.0 UNITS mA mA mA mA mA V V V V V (SEE REVERSE SIDE) R1 2N6315 SERIES COMPLEMENTARY SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS CONTINUED (TC=25C unless otherwise noted) 2N6315 2N6317 SYMBOL TEST CONDITIONS MIN MAX hfe VCE=4.0V, IC=500mA, f=1.0kHz 20 fT VCE=10V, IC=250mA, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=1.0MHz (2N6315, 2N6316) 300 Cob VCB=10V, IE=0, f=1.0MHz (2N6317, 2N6318) 200 tr VCC=30V, IC=2.5A, IB1=IB2=0.25A 0.7 toff VCC=30V, IC=2.5A, IB1=IB2=0.25A 1.8 2N6316 2N6318 MIN MAX 20 4.0 300 200 0.7 1.8 UNITS MHz pF pF s s TO-66 PACKAGE - MECHANICAL OUTLINE A B C E D SYMBOL A (DIA) B C D E (DIA) F G H I J (DIA) K (RAD) L (RAD) DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.470 0.500 11.94 12.70 0.250 0.340 6.35 8.64 0.360 9.14 0.050 0.075 1.27 1.91 0.028 0.034 0.71 0.86 0.958 0.962 24.33 24.43 0.570 0.590 14.48 14.99 0.190 0.210 4.83 5.33 0.093 0.107 2.36 2.72 0.142 0.152 3.61 3.86 0.145 3.68 0.350 8.89 TO-66 (REV:R1) Emitter F G J H I K Base L R1 This datasheet has been download from: www..com Datasheets for electronics components. |
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