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| Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 6.90.1 2.50.1 1.0 Unit: mm 0.4 2.40.2 2.00.2 3.50.1 q q q 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) 0.550.1 0.450.05 Ratings -30 -20 -5 -60 -30 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector to emitter saturation voltage Base to emitter voltage Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25C) Symbol ICBO ICEO IEBO hFE fT VCE(sat) VBE NF Zrb Cre * Conditions VCB = -10V, IE = 0 VCE = -20V, IB = 0 VEB = -5V, IC = 0 VCE = -10V, IC = -1mA VCB = -10V, IE = 1mA, f = 200MHz IC = -10mA, IB = -1mA VCE = -10V, IC = -1mA VCB = -10V, IE = 1mA, f = 5MHz VCB = -10V, IE = 1mA, f = 2MHz VCE = -10V, IC = -1mA, f = 10.7MHz min typ 1.250.05 max - 0.1 -100 -10 4.10.2 High transition frequency fT. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 4.50.1 s Features 1.5 1.5 R0.9 R0.9 1.00.1 R 0. 7 Unit A A A 70 150 300 - 0.1 - 0.7 2.8 22 1.2 220 MHz V V 4.0 50 2.0 dB pF *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC -- Ta 500 -30 Ta=25C 450 -25 2SA1254 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (mW) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 -20 IB=-250A -200A -15 -150A -10 -100A -50A - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 -25C -5 0 0 -2 -4 -6 -8 -10 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE -- IC -120 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=-10V f=1MHz IE=0 Ta=25C Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 5 IC=-1mA f=10.7MHz Ta=25C 4 Forward current transfer ratio hFE -100 Ta=75C -80 5 25C -25C 4 3 -60 3 2 -40 2 -20 1 1 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 Collector current IC (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) fT -- IE 600 VCB=-10V Ta=25C 24 P G -- IC VCE=-10V f=100MHz Ta=25C 5 NF -- IE VCB=-10V f=100MHz Ta=25C 4 Transition frequency fT (MHz) 500 20 400 16 Noise figure NF (dB) -1 -3 -10 -30 -100 Power gain PG (dB) 3 300 12 2 200 8 100 4 1 0 0.1 0.3 1 3 10 30 100 0 - 0.1 - 0.3 0 0.1 0.3 1 3 10 Emitter current IE (mA) Collector current IC (mA) Emitter current IE (mA) 2 |
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