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| CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipment. PACKAGE STYLE .280 4L STUD A 45 FEATURES: * Pg = 10 dB min. @ 960 MHz * P1dB = 1.0 Watts min. at 960 MHz * OmnigoldTM Metalization System B C E B D E F G H K DIM A B C D E F G H I J K .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 .217 / 5.51 .285 / 7.24 MINIMUM inches / mm E C J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O O I 0.25 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 25 C/W O O O O #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 ORDER CODE: ASI10577 O CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG P1dB TC = 25 C NONETEST CONDITIONS IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 24 V VCE = 5.0 V VCB = 28 V VCC = 24 V ICQ = 125 mA IC = 100 mA f = 1.0 MHz f = 960 MHz MINIMUM TYPICAL MAXIMUM 40 25 3.5 500 20 120 5.0 10 1.0 UNITS V V V A --pF dB W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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