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 DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D168
BYG60 series Fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of 1996 June 05 2000 Jul 03
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * UL 94V-O classified plastic package * Shipped in 12 mm embossed tape.
Top view
handbook, 4 columns
BYG60 series
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
cathode band k a
Side view
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYG60D BYG60G BYG60J BYG60K BYG60M VR continuous reverse voltage BYG60D BYG60G BYG60J BYG60K BYG60M IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 C; see Fig.2 averaged over any 20 ms period; Al2O3 printed-circuit board mounting (see Fig.7); Tamb = 60 C; see Fig.3 averaged over any 20 ms period; epoxy printed-circuit board mounting (see Fig.7); Tamb = 60 C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax - - - - - - - 200 400 600 800 1000 1.9 0.9 V V V V V A A - - - - - 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT
-
0.65
A
-
25
A
2000 Jul 03
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
SYMBOL ERSM PARAMETER non-repetitive peak reverse avalanche energy BYG60D to J BYG60K and M Tstg Tj storage temperature junction temperature see Fig.4 CONDITIONS L = 120 mH; Tj = Tj max prior to surge; inductive load switched off - - -65 -65
BYG60 series
MIN.
MAX.
UNIT
10 7 +175 +175
mJ mJ C C
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYG60D BYG60G BYG60J BYG60K BYG60M IR reverse current VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 C; see Fig.6 trr reverse recovery time BYG60D to J BYG60K and M Cd diode capacitance BYG60D to J BYG60K and M THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig.7. For more information please refer to the `General Part of associated Handbook'. CONDITIONS VALUE 25 100 150 UNIT K/W K/W K/W when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 VR = 0 V; f = 1 MHz - - 30 25 - - pF pF CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 IR = 0.1 mA 300 500 700 900 1100 - - - - - - - - - - - - - - 5 100 V V V V V A A - - MIN. - - TYP. MAX. 0.98 1.2 V V UNIT
- -
- -
250 300
ns ns
2000 Jul 03
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
BYG60 series
MGD481
MGD482
handbook, halfpage
4
handbook, halfpage
1.6
IF(AV) (A) 3
IF(AV) (A) 1.2
2
0.8
1
0.4
0 0 100 Ttp (C) 200
0 0 100 VR = VRRMmax; = 0.5; a = 1.57. Device mounted as shown in Fig.7. Solid line: Al2O3 printed-circuit board. Dotted line: epoxy printed-circuit board. Tamb (C) 200
VR = VRRMmax; = 0.5; a = 1.57.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGD483
MGD484
200 handbook, halfpage Tj (C) 160
handbook, halfpage
10 IF (A)
8
120
6
80 D 40 G J K M
4
2
0 0 400 800 VR (V) 1200
0 0 1 2 VF (V) 3
Device mounted as shown in Fig.7. Solid line: Al2O3 printed-circuit board. Dotted line: epoxy printed-circuit board.
Solid line: Tj = 25 C. Dotted line: Tj = 175 C.
Fig.4
Maximum permissible junction temperature as a function of reverse voltage.
Fig.5
Forward current as a function of forward voltage; maximum values.
2000 Jul 03
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYG60 series
10 3 handbook, halfpage IR (A) 10
2
MGC532
50
4.5 50 10 2.5
1
0
100
Tj ( C)
o
200
1.25
MSB213
VR = VRMMmax.
Dimensions in mm. Material: AL2O3 or epoxy-glass.
Fig.6
Reverse current as a function of junction temperature; maximum values.
Fig.7
Printed-circuit board for surface mounting.
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
2000 Jul 03
5
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors
BYG60 series
SOD106
H D
A A1 c Q
E
b
(1)
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.3 2.0 A1 0.05 b 1.6 1.4 c 0.2 D 4.5 4.3 E 2.8 2.4 H 5.5 5.1 Q 3.3 2.7
Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD106 REFERENCES IEC JEDEC DO-214AC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-09
2000 Jul 03
6
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BYG60 series
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 Jul 03
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2000
Jul 03
Document order number:
9397 750 07185


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