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  Datasheet File OCR Text:
 Variable Capacitance Diodes
MA2Z331
Silicon epitaxial planar type
Unit : mm
I Features
* Small series resistance rD. rD = 0.18 (typ.) * Good linearity of C - V curve * Small type package, optimum for down-sizing of equipment
INDICATES CATHODE
0.4 0.15
1
2
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 -55 to +150 Unit V C C
0.4 0.15
1.7 0.1 2.5 0.2
0.9 0.1
mA
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 6T
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(2V) CD(4V) CD(10V) Capacitance ratio CD(1V)/CD(4V) CD(2V)/CD(10V) Series resistance* rD CD = 9 pF, f = 470 MHz VR = 12 V VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz 17.0 14.0 10.0 5.5 1.53 2.25 6.0 1.6 2.5 0.18 15.0 Conditions Min Typ Max 10 20.0 16.0 12.4 6.5 1.83 2.75 0.22 Unit nA pF pF pF pF
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 - 0.06
+ 0.1
0.3 - 0.05
+ 0.1
1.25 0.1
1
MA2Z331
CD VR
100 f = 1 MHz Ta = 25C
120
Variable Capacitance Diodes
IF V F
1.04
CD Ta
f = 1 MHz VR = 1 V
50
100
Diode capacitance CD (pF)
30 20
Forward current IF (mA)
- 40C
1.03
25C 60
CD(Ta) CD(Ta = 25C)
80
Ta = 60C
1.02
2V 4V 10 V
10
1.01
5 3 2
40
1.00
20
0.99
1
0
4
8 12 16 20 24 28 32 36 40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.98
0
20
40
60
80
100
Reverse voltage VR (V)
Forward voltage VF (V)
Reverse current Ta (C)
IR T a
100 VR = 10 V
Reverse current IR (nA)
10
1
0.1
0.01
0
20
40
60
80 100 120 140 160
Reverse current Ta (C)
2


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