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 NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
EM033C08
EM033C08
Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package
Overview
The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random Access Memory organized as 32,768 words by 8 bits. The device is fabricated using an advanced CMOS process and NanoAmp's high-speed/lowpower circuit technology. This device is designed to be quite effective in battery powered products with it's very low operating and standby currents. It is also capable of full operation at voltages as low as 1.5 volts. The device pinout is fully compatible with NanoAmp's EM02R2XX family of Combination RAM and ROM products making it very easy to substitute an SRAM only device where the ROM is unneccessary in the application. This device is extremely stable over broad temperature and voltage ranges.
Features
* * * * * * * Extended Operating Voltage Range 1.5 to 3.6 V Very Low Standby Voltage 1.2 V Extended Temperature Range -20o to +80oC Fast Cycle Time 100 ns (@ 2.7V) Very Low Operating Current ICC < 1 mA typical at 3V, 1 Mhz Very Low Standby Current ISB = 100 nA typical Available in 32-pin STSOP or TSOP package
FIGURE 1: Pin Configuration
A11 A9 A8 A13 A14 NC CE VCC WE NC NC A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 NC D7 D6 D5 D4 D3 VSS D2 D1 D0 A0 A1 A2 A3
TABLE 1: Pin Descriptions
Pin Name A0-A14 D0-D7 CE OE WE VCC VSS NC Pin Function Address Inputs Data Inputs/Outputs Chip Enable (Active Low) Output Enable (Active Low) Write Enable (Active Low) Power Ground Not Connected (Floating)
EM033C08 STSOP, TSOP
FIGURE 2: Operating Envelope
8 Mhz
8 Typical ICC (mA) 6
5 Mhz
4 2 0 0 1 2 VCC (V) 3 4
2.5 Mhz 1 Mhz
Stock No. 23087-01 12/98
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NanoAmp Solutions FIGURE 3: Functional Block Diagram
Input/ Address Inputs A0 - A14 Address Decode Logic 32K x 8 RAM Array Output Mux and Buffers D0 - D7 Data I/O
EM033C08
CE WE OE Control Logic
FIGURE 4: Functional Description
CE H L L L WE X H H L OE X H L X D0-D7 High Z High Z Data Out Data In MODE Standby Standby READ WRITE POWER Standby Standby* Active -> Standby* Active -> Standby*
*The device will consume active power in this mode whenever addresses are changed
TABLE 2: Absolute Maximum Ratings*
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature - Extended Commercial Symbol VIN,OUT VCC PD TSTG TA Rating -0.3 to V CC+0.3 -0.3 to 4.6 500 -40 to +125 -20 to +80 Unit V V mW
oC oC
*Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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NanoAmp Solutions
EM033C08
TABLE 3: Operating Characteristics (Over specified temperature range)
Item Supply Voltage Data Retention Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Operating Supply Current (Note 1) Standby Current (Note 2) Notes: Note 1. Operating current is a linear function of frequency and voltage. You may calculate operating current using the formula shown with operating frequency (f) expressed in Mhz and operating voltage (V) in volts. Example: Operating at 2 Mhz and 2.0 volts will draw a maximum current of 0.3*2*2 = 1.2 mA. Note 2. This device assumes a standby mode whenever Chip Enable (CE) is disabled (high). It will also automatically go into a standby mode whenever all input signals are quiescent (not toggling) whenever an access or write cycle is completed regardless of the state CE. In order to achieve low standby current all input levels must be within 0.2 volts of either V CC or GND. Symbol VCC VDR VIH VIL VOH VOL ILI ILO ICC ISB IOH = 200 A IOL = -200 A VIN = 0 to V CC OE = V IH or CE = 1 VIN = VCC or 0V, CE = 0 VIN = VCC or 0V CE = VCC Test Conditions Min. 1.5 1.2 0.7VCC -0.3 VCC-0.2 0.2 1 1 0.3 * f * V 10 Max. 3.6 3.6 VCC+0.3 0.3VCC Unit V V V V V V A A mA A
TABLE 4: Capacitance*
Item Input Capacitance I/O Capacitance Symbol C IN C I/O Test Condition VIN = 0V, f = 1 Mhz, T A = 25oC VIN = 0V, f = 1 Mhz, T A = 25oC Min Max 5 5 Unit pF pF
Note: These parameters are verified in device characterization and are not 100% tested
TABLE 5: Timing Test Conditions
Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature (Unless otherwise stated) 0.1VCC to 0.9 VCC 5ns 0.5VCC CL = 30pF -20 to +80 oC
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NanoAmp Solutions
EM033C08
TABLE 6: Timing
Item Read Cycle Time Address-Chip Enable Setup Time Address-Chip Enable Hold Time Address Access Time Chip Enable Access Time Output Enable to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Chip Enable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Address Set-Up Time Write Pulse Width Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tASC tAHC tAA tCE tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAW tAS tWP tWR tWHZ tDW tDH tOW Min/Max Min Min Min Max Max Max Min Min Min Max Min Max Min Min Min Min Min Min Min Min Max Min Min Min 1.5V 750 -80 600 750 750 250 0 0 0 100 0 100 40 750 750 750 0 400 0 0 150 400 75 40 1.8V 250 -40 200 250 250 70 0 0 0 50 0 50 20 250 250 250 0 150 0 0 70 150 35 20 2.4V 150 -30 120 150 150 50 0 0 0 40 0 40 15 150 150 150 0 75 0 0 50 75 20 15 2.7-3.6V 100 -20 75 100 100 30 0 0 0 25 0 25 10 100 100 100 0 50 0 0 30 50 15 10 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
FIGURE 5: Read Cycle Timing (WE = VIH)
tRC A0-A14 tAA tASC CE tCS OE tLZ D0-D7 tOE tOLZ Data Valid tOHZ tHZ tAHC
tOH
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EM033C08
FIGURE 6: Write Cycle Timing (OE fixed)
tWC A0-A14 tAW tCW CE tAS WE tDW Data In tWHZ Data Out High-Z Data Valid tOW tASC tAHC tWP tDH tOH tWR
FIGURE 7: Write Cycle Timing (OE clock)
tWC A0-A14 tASC OE tAW tCW CE tWP WE tAS tWHZ tDW Data Data In tOHZ High-Z Data Out tOW tDH tAHC tWR
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NanoAmp Solutions TABLE 7: Ordering Information
Part Number* EM033C08N EM033C08T Package 32 pin STSOP 32 pin TSOP Temperature Range -20 to +80oC -20 to +80 C
o
EM033C08
Voltage Range 1.5 to 3.6 V 1.5 to 3.6 V
Speed (@ 2.7V+) 100 ns 100 ns
* Please use this part number when ordering this product. This number will be marked on the device package.
TABLE 8: Revision History Revision # 01 Date Dec. 1, 1998 Initial Release Change Description
Stock No. 23087-01 12/98
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