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| NTE2394 MOSFET N-Channel Enhancement Mode, High Speed Switch Description: The NTE2394 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 450V for Off-Line SMPS D High Current: 12A for up to 350W SMPS D Ultra Fast Switching for Operation at less than 100kHz Industrial Applications: D Switching Mode Power Supplies D Motor Controls Absolute Maximum Ratings: Drain-Source Voltage (VGS = 0, Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain-Gate Voltage (RGS = 20k, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Pulsed Drain Current (Note 2), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Clamped Drain Inductive Current (L = 100H), IDLM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.8A Total Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.44W/C Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. TJ = +25 to +125C Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Thermal Data: Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69C/W Typical Thermal Resistance, Case-to-Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W Maximum Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS ID = 250A, VGS = 0 IDSS VGS = 0, VDS = Max Rating VGS = 0, VDS = 400V, TC = +125C Gate-Body Leakage Current ON Characteristics (Note 3) Gate Threshold Voltage On-State Drain Current Static Drain-Source On Resistance Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Switching Characteristics Turn-On Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Source Drain Diode Characteristics Source-Drain Current Source-Drain Current (Pulsed) Forward ON Voltage Reverse Recovery Time Reverse Recovered Charge ISD ISDM VSD trr Qrr Note 3 ISD = 14A, VGS = 0 IDS = 14A, di/dt = 100A/s, TJ = +150C - - - - - - - - 1300 7.4 14 56 1.4 - - A A V ns C td(on) tr td(off) tf Qg VGS = 10V, ID = 13A, VDS = 400V VDD = 210V, ID = 7.0A, RI = 4.7 - - - - - - - - - - 35 50 150 70 120 ns ns ns ns nC gfs Ciss Coss Crss VDS > ID(on) x RDS(on) max, ID = 7.9A, Note 4 VDS = 25V, VGS = 0, f = 1MHz 9.3 - - - - - - - - 3000 600 200 mho pf pf pf VGS(th) ID(on) RDS(on) VDS = VGS, ID = 250A VDS > ID(on) x RDS(on) max, VGS = 10V VGS = 10V, ID = 7.9A 2 14 - - - - 4 - 0.4 V A IGSS VDS = 0, VGS = 20V 500 - - - - - - - - 250 1000 500 V A A nA Symbol Test Conditions Min Typ Max Unit Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulsed: Pulse Duration = 300s, Duty Cycle 1.5% .190 (4.82) .615 (15.62) D .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) G D S .215 (5.47) |
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