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Datasheet File OCR Text: |
NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate-Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625C/W Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nm Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Gate Leakage Current Collector Cutoff Current Collector-Emitter Breakdown Voltage Gate-Emitter Cutoff Voltage Collector-Emitter Saturation Voltage Symbol IGES ICES VGE(off) VCE(sat) Cies tr ton tf toff Test Conditions VGE = 25V, VCE = 0 VCE = 900V, VGE = 0 IC = 60mA, VCE = 5V IC = 10A, VGE = 15V IC = 60A, VGE = 15V Input Capacitance Rise Time Turn-On Time Fall Time Turn-Off Time VCE = 10V, VGE = 0, f = 1MHz VCC = 600V Min - - 900 3.0 - - - - - - - Typ - - - - - 2.4 5300 0.25 0.35 0.25 0.50 Max 500 1.0 - 6.0 2.4 3.7 - 0.60 0.80 0.40 1.00 Unit nA mA V V V V pF s s s s V(BR)CES IC = 2mA, VGE = 0 C G E .810(20.57) Max .236 (6.0) .204 (5.2) 1.030 (26.16) .137 (3.5) Dia Max .098 (2.5) .787 (20.0) .215 (5.45) .040 (1.0) .023 (0.6) G C E Note: Collector connected to heat sink. |
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