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| AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1446 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1446 is Pb-free (meets ROHS & Sony 259 specifications). AOL1446L is a Green Product ordering option. AOL1446 and AOL1446L are electrically identical. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7m (VGS = 10V) RDS(ON) < 11m (VGS = 4.5V) Ultra SO-8 TM Top View D Fits SOIC8 footprint ! D S Bottom tab connected to drain G G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS 20 Gate-Source Voltage Continuous Drain 85 TC=25C G B Current 70 ID TC=100C IDM 200 Pulsed Drain Current Continuous Drain TA=25C 14 G Current IDSM 11 TA=70C C Avalanche Current IAR 30 C Repetitive avalanche energy L=0.3mH EAR 135 TC=25C 100 PD Power Dissipation B TC=100C 50 TA=25C PDSM TA=70C Junction and Storage Temperature Range TJ, TSTG Power Dissipation A Units V V A A A mJ W W C 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 19.5 48 1 Max 25 60 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1446 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125C 1 100 2.3 5 6.7 8.4 60 0.72 Min 30 0.005 1 5 100 3 7 8.1 11 1 85 1600 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1325 535 155 0.95 26 13.5 3.2 6.6 7.2 12.5 22 6 29.7 29 1.5 32 18 VGS=4.5V, VDS=15V, ID=20A VGS=10V, V DS=15V, R L=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 10 18 33 9 36 36 A: The value of R qJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 10 Normalized On-Resistance 9 RDS(ON) (m) 8 7 6 5 4 0 10 20 30 40 50 60 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 16 RDS(ON) (m) ID=20A IS (A) 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 VGS=4.5V 1.8 1.6 1.4 VGS=4.5V 1.2 1 ID=20A VGS=10V ID(A) 10V 4.0V 60 50 40 30 20 VGS=3V 10 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 25C VDS=5V 125C 3.5V VGS=10V 12 125C 25C 8 Alpha & Omega Semiconductor, Ltd. AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 2400 2000 1600 1200 800 400 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss 1000 RDS(ON) limited 1ms 10s Power (W) 100s 400 100 ID (Amps) T J(Max)=175C T A=25C 300 10 DC T J(Max)=175C T A=25C 200 1 100 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note H) 10 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJc Normalized Transient Thermal Resistance D=T on/T T J,PK =T A+PDM.ZJA.RJA RJC=1.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 PD T on T 10 100 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 ID(A), Peak Avalanche Current T A=25C Power Dissipation (W) 0.0001 0.001 0.01 80 60 40 20 0 0.00001 90 120 60 30 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 80 Current rating ID(A) Power (W) 0 25 50 75 100 125 150 175 60 40 20 0 TCASE (C) Figure 14: Current De-rating (Note B) 100 80 60 40 20 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=60 C/W 0.0001 0.001 0.01 0.1 1 PD T on 0.01 T 0.001 0.00001 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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