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600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction MOSFET
(B)
TO -2 47
D3PAK
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated * Popular TO-247 or Surface Mount D3 Package
(S)
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT31N60B_SCS(G) 600 31 19 93 30 255 2.00 -55 to 150 260 50 11
2 3
UNIT Volts
Amps
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current
2
Volts Watts W/C C V/ns Amps mJ
Repetitive Avalanche Energy
1.2 800
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN 600
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 18A)
0.100 10 TBD 100 2.1 3 3.9
Ohms A nA Volts
2-2006 050-7238 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.2mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff tr Qgs Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
5
APT31N60B_SCS(G)
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 18A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 18A @ 25C RG = 3.3
6
MIN
TYP
MAX
UNIT pF
3055 3260 28 65 14 22 10 5 110 5 290 125 170 100 85
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
6
nC
ns
INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 18A, RG = 4.3 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 18A, RG = 4.3
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 4
MIN
TYP
MAX 18 93 1.2
UNIT Amps Volts ns C
(Body Diode) (VGS = 0V, IS = -18A) 450 12
Reverse Recovery Time (IS = -18A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -18A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ 7 dt
/dt
4
V/ns UNIT C/W
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX
0.5 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting Tj = +25C, L = 33.23mH, RG = 25, Peak IL = 11A 4 Pulse Test: Pulse width < 380s, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 We do not recommend using this CoolMOSTM product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.60 , THERMAL IMPEDANCE (C/W) 0.50 D = 0.9 0.40 0.7 0.30 0.5 0.20 0.10 0 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE
Note:
1-2006
PDM
050-7238 Rev A
t1 t2
JC
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
100 90 80 70 60 50 40 30 20 10 0
APT31N60B_SCS(G)
15 & 10V 6.5V
RC MODEL Junction temp. (C) 0.283 Power (watts) 0.216 Case temperature. (C) 0.727 0.00355
6V
5.5V 5V
4.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100 90
0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20 1.10 1.00
VGS=20V
NORMALIZED TO VGS = 10V @ 18A
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPERES)
80 70 60 50 40 30 20 10 0
VGS=10V
TJ = -55C
TJ = +25C
TJ = +125C
0.90 0.80
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
ID, DRAIN CURRENT (AMPERES)
30 25 20 15 10 5 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
35
1.15
10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
I = 18A
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.15
0.90 -50
V
2.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
= 10V
1.10 1.05 1.00 0.95 0.90 1-2006 050-7238 Rev A 0.85 0.80 0.75 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.70 -50
1.5
1.0
0.5
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 -50
93 50 ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY R (ON) DS
204 104
APT31N60B_SCS(G)
Ciss
C, CAPACITANCE (pF)
10 5
103
100S
102
Coss
1 TC =+25C TJ =+150C SINGLE PULSE
1mS
10mS
101 Crss
.1
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 18A
D
0 50 100 150 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
14 12 10 8 6 4 2 0
0 10
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
200 100
TJ =+150C TJ =+25C
VDS=120V VDS=300V
10
VDS=480V
20 30 40 50 60 70 80 90 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 180
160 140
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 45
40
td(off)
V
DD G
35 30
td(on) and td(off) (ns)
120 100 80 60 40 20 0
= 400V
R
= 4.3
tr and tf (ns)
tf
V
DD G
T = 125C J L = 100H
25
= 400V
20 15 10
R
= 4.3
T = 125C J L = 100H
tr
td(on) 0 5 10 15 ID (A) 20 25 30
5 0
0
5
10
FIGURE 14, DELAY TIMES vs CURRENT
500
V
DD G
FIGURE 15, RISE AND FALL TIMES vs CURRENT
400 350
Eoff
15 ID (A)
20
25
30
= 400V
R
= 4.3
SWITCHING ENERGY (mJ)
L = 100H E diode reverse recovery.
on
SWITCHING ENERGY (mJ)
400
T = 125C
J
includes
300 250 200 150 100 50
Eon
V
DD
300
Eon
200
Eoff
1-2006
= 400V
I = 18A
D
100
T = 125C L = 100H E diode reverse recovery.
on J
050-7238 Rev A
includes
15 20 25 30 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90%
APT31N60B_SCS(G)
10%
Gate Voltage TJ125C
Gate Voltage
TJ125C
td(on) tr
90% 5% 10%
Switching Energy
td(off)
Drain Current
90%
tf
Drain Voltage
5%
Drain Voltage
10% 0 Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DQ60
VDD
ID
VDS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
e3 100% Sn
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7238 Rev A
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
1-2006
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055)
3.81 (.150) 4.06 (.160) (Base of Lead)

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