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| APM2504NU N-Channel Enhancement Mode MOSFET Features * 25V/75A , RDS(ON)=3.6m(typ.) @ VGS=10V RDS(ON)=5.4m(typ.) @ VGS=4.5V Pin Description G D S * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 D Applications * Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information A PM 2504N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e A PM 2504N U : A PM 2504N XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 1 www.anpec.com.tw APM2504NU Absolute Maximum Ratings Symbol Common Ratings (TA = 25C) VDSS VGSS IS TJ TSTG Drain-Source Voltage Gate-Source Voltage Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C 25 20 20 150 -55 to 150 180 100 75 50 50 20 2.5 W C/W * Parameter Rating Unit V A C C Mounted on Large Heat Sink IDP ID PD RJC 300is Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in Pad Area IDP ID PD RJA 300is Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C 180 100 19 12 2.5 1 50 180 100 15 9 1.6 0.6 75 W C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RJA Note: * Current limited by bond wire. 300is Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A C/W C/W C/W Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 2 www.anpec.com.tw APM2504NU Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM2504NU Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) a ID=35A, VDD=15V 25 100 mJ VGS=0V, IDS=250A VDS=20V, VGS=0V VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=40A VGS=4.5V, IDS=20A ISD=20A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz V 1 A V nA m 1.8 3.6 5.4 2.5 100 4.5 7 Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance 1.3 Diode Characteristics a VSD Diode Forward Voltage Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b b 0.8 1.3 V pF pF pF 1 4350 920 670 18 34 39 130 40 21 85 25 ns ns ns ns VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Notes: 38.5 VDS=15V, VGS=4.5V, IDS=20A 13.6 17.2 50 nC nC nC Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 3 www.anpec.com.tw APM2504NU Typical Characteristics Power Dissipation 60 90 80 Drain Current 50 70 ID - Drain Current (A) o Ptot - Power (W) 40 60 50 40 30 20 30 20 10 10 0 TC=25 C 0 20 40 60 80 100 120 140 160 180 0 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area 300 2 Thermal Transient Impedance Normalized Transient Thermal Resistance 100 ID - Drain Current (A) it m Li n) o s( Rd 1 Duty = 0.5 1ms 10ms 100ms 0.2 0.1 10 1s DC 0.1 0.05 0.02 0.01 1 0.01 Single Pulse T =25 C 0.1 C 0.1 o 1 10 70 1E-3 1E-4 Mounted on 1in pad o RJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 4 www.anpec.com.tw APM2504NU Typical Characteristics (Cont.) Output Characteristics 180 160 10 VGS= 6,7,8,9,10V 5V 9 Drain-Source On Resistance RDS(ON) - On - Resistance (m) 140 8 7 6 5 4 3 2 1 VGS=4.5V ID - Drain Current (A) 120 100 80 60 40 4.5V 4V VGS=10V 3.5V 20 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 0 0 30 60 90 120 150 180 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 180 160 140 1.6 Gate Threshold Voltage IDS =250A Normalized Threshold Vlotage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 ID - Drain Current (A) 120 100 80 60 40 20 0 Tj=125 C o Tj=25 C Tj=-55 C o o 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 5 www.anpec.com.tw APM2504NU Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 40A 100 200 Source-Drain Diode Forward Normalized On Resistance Tj=150 C o 1.2 1.0 0.8 0.6 RON@Tj=25 C: 3.6m 0.4 -50 -25 0 25 50 75 100 125 150 o IS - Source Current (A) 1.4 10 Tj=25 C o 1 0.0 0.3 0.6 0.9 1.2 1.5 Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 8000 Frequency=1MHz 7000 10 VDS=10V ID =20A Gate Charge VGS - Gate-source Voltage (V) 25 8 6000 C - Capacitance (pF) 5000 Ciss 4000 3000 2000 Coss 1000 0 Crss 6 4 2 0 5 10 15 20 0 0 15 30 45 60 75 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 6 www.anpec.com.tw APM2504NU Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 7 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 APM2504NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 8 www.anpec.com.tw APM2504NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 9 www.anpec.com.tw APM2504NU Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 J 2 0.5 Po T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 1.5 0.25 4.0 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 10 www.anpec.com.tw |
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