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| AP50L02S/P Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 17m 40A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP50L02P) is available for low-profile applications. G D GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 S Rating 25 20 40 27 140 44.6 0.36 TO-220(P) Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Unit /W /W Data & specifications subject to change without notice 200218032 AP50L02S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.037 Max. Units 17 35 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=10A 10 11.5 2.1 8.4 7 60 17 9 390 245 100 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= 20V ID=20A VDS=20V VGS=5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.26V 1 Min. - Typ. - Max. Units 40 140 1.26 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=40A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP50L02S/P 160 120 140 T C =25 C V G =10V 100 o T C =150 o C V G =10V 120 V G =8.0V V G =8.0V ID , Drain Current (A) 80 ID , Drain Current (A) 100 80 60 60 V G =6.0V V G =6.0V 40 40 20 20 V G =4.0V V G =4.0V 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 34 1.8 30 I D =10A T c =25 I D =20A 1.6 V G =10V 26 Normalized R DS(ON) 1.4 RDS(ON) (m ) 22 1.2 18 1 0.8 14 0.6 10 2 3 4 5 6 7 8 9 10 11 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP50L02S/P 50 50 40 40 ID , Drain Current (A) 30 30 20 PD (W) 20 10 10 0 25 50 75 100 125 150 0 0 50 100 150 T c , Case Temperature ( o C) T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 DUTY=0.5 100 Normalized Thermal Response (R thjc) 0.2 ID (A) 10us 100us 10 0.1 0.1 0.05 0.02 PDM SINGLE PULSE t 0.01 1ms 10ms T c =25 o C Single Pulse 1 1 10 100 T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 100ms 0.01 0.00001 V DS (V) 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP50L02S/P f=1.0MHz 16 10000 14 I D =20A V DS =12V V DS =16V V DS =20V 1000 VGS , Gate to Source Voltage (V) 12 10 8 C (pF) Ciss Coss 100 6 Crss 4 2 0 0 5 10 15 20 25 30 10 1 6 11 16 21 26 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 2 T j =150 o C IS(A) T j =25 o C VGS(th) (V) 1 0 -50 1 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j , Junction Temperature( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP50L02S/P VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.6 x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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