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RF Power Field Effect Transistor LDMOS, 865 -- 960 MHz, 45W, 26V
5/21/04
Preliminary
MAPLST0810-045CF
Features
Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: POUT: 45W (P1dB) Gain: 17.5dB Efficiency: 50% Ruggedness: 10:1 VSWR @ 45W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability
Package Style
P-239
Maximum Ratings
Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 117 -40 to +150 +200 Units Vdc Vdc W C C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.5 Unit C/W
NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V
MAPLST0810-045CF
5/21/04
Preliminary
Characteristic DC CHARACTERISTICS @ 25C Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 A) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 350 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25C Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W) Input Return Loss (VDD = 26 Vdc, IDQ = 350 mA, f = 920 & 960 MHz, POUT = 45 W) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 350 mA, f = 900 MHz, POUT = 45 W, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Symbol
Min
Typ
Max
Unit
V(BR)DSS IDSS IGSS VGS(th)
65 -- -- 2
-- -- -- --
-- 1 3 4
Vdc Adc Adc Vdc
VDS(Q)
--
4.0
--
Vdc
VDS(on) Gm
--
0.20
--
Vdc
--
3.0
--
S
Ciss Coss Crss
-- -- --
82 46 2.5
-- -- --
pF pF pF
GP EFF () IRL
-- -- --
17.5 50 12
-- -- --
dB % dB
No Degradation In Output Power Before and After Test
2
RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V
MAPLST0810-045CF
5/21/04
Preliminary
1 8 1 7 1 6 CW: VDD = 26/28V, IDQ = 350mA 70 60 50 40 30
Gain ( 26V) Gain ( 28V) Ef f iciency ( 26V) Ef f iciency ( 28V)
5
EDGE: VDD = 26/28V, IDQ = 350mA
4 Efficiency (%) EVM(%) 3 2 1 0 30 35 40 POUT(dBm - Avg.) 45
EVM @ 26Vdc EVM @ 28Vdc
Gain(dB)
1 5 1 4 1 3 1 2 1 1 35 40 45 50
20 1 0 0
POUT(dBm )
Graph 1. CW Power Gain and Efficiency vs. Output Power
Graph 2. EDGE RMS EVM vs. Output Power
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65 30
2-TONE: VDD = 26/28V, IDQ = 350mA
IM3(dBc)
IM3 @ 26Vdc IM3 @ 28Vdc
35
40
45
POUT(dBm- Avg.)
Graph 3. 2-Tone Intermodulation vs. Output Power
3
RF Power LDMOS Transistor, 865-960 MHz, 45W, 26V
MAPLST0810-045CF
5/21/04
Preliminary
Package Dimensions Test Fixture Circuit Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information.
4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

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