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| NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 MARCH 94 ZTX337C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 50 45 5 E-Line TO92 Compatible VALUE UNIT V V V mA mA mW C 100 800 750 -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)EBO ICBO VCE(sat) VBE(on) 250 170 200 12 50 45 5 100 0.7 1.2 630 MHz pF TYP. MAX. UNIT V V V nA V V CONDITIONS. IC=100A IC=100A IE=100A VCB=45V, IE=0 IC=500mA, IB=50mA* IC=300mA,VCE=1V* IC=100mA, VCE=1V* IC=300mA, VCE=1V* IC=10mA, VCE=5V f=50MHz VCB=10V, f=1MHz Static Forward Current hFE Transfer Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-163 |
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