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| MMBF2201NT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. * Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Miniature SC-70/SOT-323 Surface Mount Package Saves Board Space MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Continuous @ TA = 70C - Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID ID IDM PD 150 1.2 TJ, Tstg RJA TL - 55 to 150 833 260 mW mW/C C C/W C 1 2 W = Work Week 3 SC-70/SOT-323 CASE 419 STYLE 8 N1 W Value 20 20 300 240 750 Unit Vdc Vdc mAdc 2 1 http://onsemi.com 300 mAMPS 20 VOLTS RDS(on) = 1 W N-Channel 3 MARKING DIAGRAM 1. Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. PIN ASSIGNMENT 3 Drain Gate 1 2 Source Top View ORDERING INFORMATION Device MMBF2201NT1 Package SC-70/ SOT-323 Shipping 3000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2000 1 November, 2000 - Rev. 3 Publication Order Number: MMBF2201NT1/D MMBF2201NT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 5) SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 3.) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. IS ISM VSD - - - - - 0.85 0.3 0.75 - V A (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT - - - - - 2.5 2.5 15 0.8 1400 - - - - - pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss - - - 45 25 5.0 - - - pF VGS(th) rDS(on) - - gFS - 0.75 1.0 450 1.0 1.4 - mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS - - IGSS - - - - 1.0 10 100 nAdc 20 - - Vdc Adc Symbol Min Typ Max Unit TYPICAL CHARACTERISTICS 1.0 0.9 RDS , ON RESISTANCE (OHMS) ID , DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 VGS = 3 V VGS = 2.5 V 4 7 8 2 3 5 6 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 9 10 VGS = 3.5 V VGS = 4 V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120 140 160 VGS = 4.5 V ID = 100 mA VGS = 10 V ID = 300 mA Figure 1. Typical Drain Characteristics http://onsemi.com 2 Figure 2. On Resistance versus Temperature MMBF2201NT1 TYPICAL CHARACTERISTICS 10 RDS , ON RESISTANCE (OHMS) 8 6 4 2 0 ID = 300 mA RDS , ON RESISTANCE (OHMS) 1.2 1.0 0.8 0.6 0.4 0.2 0 VGS = 4.5 V VGS = 10 V 0 1 2 3 4 5 6 7 8 GATE-SOURCE VOLTAGE (VOLTS) 9 10 0 0.1 0.2 0.5 0.3 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.7 0.8 Figure 3. On Resistance versus Gate-Source Voltage Figure 4. On Resistance versus Drain Current 1.0 I S , SOURCE CURRENT (AMPS) 45 40 35 C, CAPACITANCE (pF) VGS = 0 V F = 1 mHz 0.1 30 25 20 15 10 5 0 Ciss Coss Crss 0 2 4 8 12 16 6 10 14 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 18 20 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN FORWARD VOLTAGE (VOLTS) 1.0 Figure 5. Source-Drain Forward Voltage Figure 6. Capacitance Variation 1.0 0.9 I D , DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.0 4.5 -55 25 150 Figure 7. Transfer Characteristics http://onsemi.com 3 MMBF2201NT1 INFORMATION FOR USING THE SC-70/SOT-323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.025 0.65 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC-70/SOT-323 POWER DISSIPATION The power dissipation of the SC-70/SOT-323 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SC-70 package, PD can be calculated as follows: PD = TJ(max) - TA RJA one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, The 833C/W for the SC-70/SOT-323 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SC-70/SOT-323 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Cladt. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 4 MMBF2201NT1 PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE L A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 S 1 2 B D G C 0.05 (0.002) N K J H STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN http://onsemi.com 5 MMBF2201NT1 Notes http://onsemi.com 6 MMBF2201NT1 Notes http://onsemi.com 7 MMBF2201NT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MMBF2201NT1/D |
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