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NTE2323 Silicon NPN Transistor Quad, Amplifier
Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C, Each Die), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.98mW/C Total Device Dissipation (TA = +25C, Four Die Equal Power), PD . . . . . . . . . . . . . . . . . . . . . . . 1.7W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.6mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Reistance, Junction-to-Ambient, RthJA Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73.5C/W Thermal Reistance, Junction-to-Case, RthJC Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39C/W Coupling Factors, Junction-to-Ambient Q1-Q4 or Q2-Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56% Q1-Q2 or Q3-Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10% Coupling Factors, Junction-to-Case Q1-Q4 or Q2-Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46% Q1-Q2 or Q3-Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5% Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO V(BR)CBO V(BR)EBO ICBO IC = 1mA, IB = 0 IC = 100A, IE = 0 IE = 100A, IC = 0 VCB = 150V, IE = 0 200 20 5 - - - - - - - - 100 V V V nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter ON Characteristics DC Current Gain hFE VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 30mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Input Capacitance VCE(sat) VBE(sat) fT Cobo Cibo IC = 20mA, IB = 2mA IC = 20mA, IB = 2mA VCE = 20V, IC = 10mA, f = 100MHz VCB = 20V, IE = 0, f = 1MHz VEB = 3V, IC = 0, f = 1MHz 25 40 40 - - 50 - - 45 60 80 0.3 0.7 80 2.5 40 - - - 0.5 0.9 - 5.0 50 V V MHz pF pF Symbol Test Conditions Min Typ Max Unit
Pin Connection Diagram Collector 1 Base 2 Emitter 3 N.C. 4 Emitter 5 Base 6 Collector 7 14 Collector 13 Base 12 Emitter 11 N.C. 10 Emitter 9 8 Base Collector
14
8
1
7
.785 (19.95) Max .200 (5.08) Max
.300 (7.62)
.100 (2.45) .600 (15.24)
.099 (2.5) Min

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Price & Availability of NTE2323

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2323 31C3546	NTE Electronics Inc	Transistor, bjt, array, independent,200V V(Br)Ceo,500Ma I(C),dip \|Nte Electronics NTE2323		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2323 2368-NTE2323-ND	NTE Electronics Inc	TRANS NPN 200V 0.5A 14DIP	100: USD5.63 50: USD5.76 20: USD6.1 10: USD6.44 1: USD6.78	57

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2323	NTE Electronics Inc	Quad Transistor NPN Silicon 200V IC=0.5A 14-lead DIP	2500: USD4.89 1000: USD4.96 500: USD5.11 250: USD5.26 100: USD5.58 50: USD5.76 5: USD7.31 1: USD8.04	5

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2323	NTE Electronics Inc		1: USD8.96	2

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2323	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 0.5A I(C), 200V V(BR)CEO, 4-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 14 PIN	4: USD5.475 2: USD7.3 1: USD10.95	3
NTE2323	NTE Electronics Inc	POWER BIPOLAR TRANSISTOR, 0.5A I(C), 200V V(BR)CEO, 4-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 14 PIN	2: USD8 1: USD12	1

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2323 NTE2323	NTE Electronics Inc	Transistor: NPN x4; bipolar; 200V; 0.5A; 0.75W; DIP14	10: USD5.93 3: USD6.71 1: USD7.46	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
NTE2323	NTE Electronics Inc	Quad Transistor NPN Silicon 200V IC=0.5A 14-lead DIP	2500: USD4.89 1000: USD4.96 500: USD5.11 250: USD5.26 100: USD5.58 50: USD5.76 5: USD7.31 1: USD8.04	5

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