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E2Q0011-38-71 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1146
electronic components KGF1146
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current operation, high output power, and high isolation. The KGF1146 specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the high isolation, the KGF1146 is an ideal part for a VCO-buffer amplifiers and an intermediate-stage amplifier for personal handy phones, such as cellular phones.
FEATURES
* Low current operation: 2.5 mA (max.) * High output power: 1.5 dBm (min.) * High isolation: -40 dB * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP
PACKAGE DIMENSIONS
1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05
1.10.15
0.36 0.74
3.00.2
1.50.15
0.3 MIN
0 to 0.15
Package material 1.90.1 2.80.15 Lead frame material 0.125
+0.03 -0
Epoxy resin 42 alloy Solder plating 5 mm or more
Pin treatment Solder plate thickness
(Unit: mm)
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electronic components
KGF1146
MARKING
(4) (3)
BXX
(1) (2) ALPHABETICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate (2) Source (3) Drain (4) GND
CIRCUIT
D (3)
(1) G S (2)
100 pF
(4)
GND
APPLICATION EXAMPLE FOR PORTABLE PHONES
GaAs device KGF1305 KGF1254/56 KGF1165 KGF1145/46 Transmission system intermediate frequency VCO
Antenna
Power amplifier
Driver amplifler
SAW filter
Wide-band amplifier KGL2115
Buffer amplifier. Oscillator Divider 1 n Filter
Duplexer
Prescaler Prescaler KGL2115 Divider 1 n Filter
KGF1175
KGF1155
Buffer amplifier. Oscillator Mixer amplifier VCO
Head amplifier
SAW filter
Receiving system intermediate frequency
KGF1145/46
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electronic components
KGF1146
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Unit V V mA mW C C Min. -- -3 -- -- -- -45
(Ta = 25C) Max. 6 0.4 60 200 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Output power Isolation Symbol IGSS IGDO IDS(off) IDSS ID VGS(off) gm PO ISO Condition VGS = -3 V VGDO = -6 V VDS = 3 V, VGS = -2.0 V VDS = 3 V, VGS = 0 V (*1), PIN = -10 dBm VDS = 3 V, IDS = 120 mA VDS = 3 V, IDS = 2.0 mA (*1), PIN = -10 dBm (*1), PIN = -10 dBm Unit mA mA mA mA mA V mS dBm dB Min. -- -- -- 15 -- -1.5 8 1.5 40 Max. 12 60 120 -- 2.5 -0.5 -- -- --
*1 Self-bias condition: VDD = 5.0 0.25 V, VG = 0 V, f = 850 MHz
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electronic components
KGF1146
RF CHARACTERISTICS
Po vs. PIN
10
Output Power Po (dBm)
5
ID (mA) Operating Current
0
4 3
-10 2 -20 VDD = 4.75 V f = 850 MHz -30 -40 -30 -20 -10 0 1 0
Input Power PIN (dBm)
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electronic components Typical S Parameters
KGF1146
VDD = 5 V, ID = 1.85 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 1.016 1.008 1.002 0.995 0.988 0.981 0.973 0.963 0.956 0.945 0.938 0.929 0.918 0.906 0.897 0.880 0.868 0.855 0.847 0.830 0.819 0.804 0.792 0.778 0.770 0.754 -13.78 -16.42 -19.14 -21.80 -24.38 -26.95 -29.64 -32.24 -34.90 -37.58 -40.39 -42.98 -46.03 -48.76 -51.64 -54.61 -57.75 -60.87 -63.86 -66.88 -69.77 -72.90 -76.11 -79.41 -82.77 -85.91 3.144 3.184 3.091 3.060 2.952 2.961 2.741 2.687 2.557 2.481 2.316 2.187 2.009 1.872 1.775 1.710 1.650 1.562 1.499 1.470 1.413 1.364 1.337 1.304 1.287 1.238 -53.83 -65.20 -76.19 -84.59 -92.88 -98.49 -105.75 -111.43 -117.29 -122.72 -129.37 -134.82 -140.24 -151.35 -155.91 -161.08 -166.40 -171.49 -176.27 179.50 176.86 174.40 169.45 164.51 159.93 155.02 0.002 0.002 0.001 0.002 0.003 0.002 0.001 0.002 0.001 0.001 0.001 0.001 0.002 0.001 0.003 0.003 0.005 0.007 0.008 0.009 0.013 0.014 0.016 0.019 0.024 0.028 91.21 72.13 88.37 87.52 75.89 69.05 51.70 89.09 31.04 96.43 138.33 124.06 -115.76 -129.25 -128.46 -121.98 -139.31 -126.58 -127.50 -139.94 -129.23 -134.15 -136.16 -140.71 -134.62 -137.56 0.954 0.954 0.954 0.952 0.950 0.948 0.952 0.944 0.945 0.941 0.941 0.937 0.941 0.932 0.934 0.929 0.926 0.927 0.923 0.924 0.920 0.919 0.914 0.916 0.914 0.916 -7.09 -8.39 -9.92 -11.21 -12.84 -14.07 -15.34 -16.82 -18.09 -19.74 -20.90 -22.03 -23.52 -24.82 -26.27 -27.28 -28.67 -29.86 -30.90 -32.30 -33.42 -34.91 -35.62 -37.07 -37.84 -38.89
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electronic components Typical S Parameters
KGF1146
VDD = 5 V, ID = 1.85 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
j1.0 j0.5 j2.0 135 j0.2 j5.0 45 90
3.0 0.5 S22 0.5 3.0 S11 3.0 0.0 0.2 0.5 1.0 2.0 5.0 3.0 S21 180
5.0 4.0 3.0 2.0 1.0
0.5
0.01 0.02 0.03 0.04 0.05
0
S12 0.5
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electronic components Test Circuit
KGF1146
L1
L2
L2
L1
IN
Cc
W1
W1
Cc
OUT
W2
L3
C1
C2
L3 W2 Cc Vd
L1 = 20 mm L2 = 8 mm L3 = 10 mm
W1 = 1 mm W2 = 3 mm Cc = 1000 pF
C1, C2: Trimmer Capacitor (Murata Giga-Trimmer, max. 4.5 pF)
Substrate parameters er = 2.6 h = 1.6 mm
C1 and C2 are tuned to obtain maximum output power.
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