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Ordering number : ENN6549
3LN02N
N-Channel Silicon MOSFET
3LN02N
Ultrahigh-Speed Switching Applications
Features
* * *
Package Dimensions
unit : mm 2178
5.0 4.0
Low ON resistance. Ultrahigh-speed switching. 2.5V drive.
[3LN02N]
4.0
0.45 0.5
0.6 2.0
5.0
0.45
0.44
1
2
3
14.0
1 : Source 2 : Drain 3 : Gate
1.3
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions
1.3
SANYO : NP
Ratings 30 10 0.3 1.2 0.4 150 --55 to +150
Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=150mA Ratings min 30 10 10 0.4 0.4 0.56 1.3 typ max Unit V A A V S
Marking : YD
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000 TS IM TA-2952 No.6549-1/4
3LN02N
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=150mA, VGS=4V ID=80mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA VDS=10V, VGS=10V, ID=300mA IS=300mA, VGS=0 Ratings min typ 0.9 1.2 2.6 30 15 10 32 110 250 160 2.34 0.38 0.45 0.8 1.2 max 1.2 1.7 5.2 Unit pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Sourse on-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Switching Time Test Circuit
4V 0V VIN VIN VDD=15V ID=150mA RL=100
PW=10s D.C.1%
D G
VOUT
3LN02N P.G 50
S
0.30
ID -- VDS
2.5
0.6
ID -- VGS
Ta= --25
0 0.5 1.0 1.5 2.0
0.25
3.5V 4.0V
6.0V
V
0.5
C
Drain Current, ID -- A
Drain Current, ID -- A
2.0
0.20
0.4
V
0.15
0.3
0.10
VGS=1.5V
0.2
0.05
0.1
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0 2.5 IT00225
Drain-to-Source Voltage, VDS -- V
3.0
IT00224 10
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- ID
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) --
2.5
7 5 3 2
VGS=4V
2.0
Ta=75C
1.0 7 5 3 2
1.5
ID=150mA 80mA
1.0
--25C 25C
0.5
0 0 1 2 3 4 5 6 7 8 9 10
0.1 0.01
2
3
5
7
0.1
2
3
5
Gate-to-Source Voltage, VGS -- V
IT00226
Drain Current, ID -- A
No.6549-2/4
25
7 1.0 IT00227
C
75 C
3.0V
VDS=10V
3LN02N
10 7
RDS(on) -- ID
VGS=2.5V
10
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5
Ta=75C --25C 25C
1.0 7 5 3 2
3
Ta=75C --25C
2
25C
0.1 0.01
2
3
5
7
0.1
2
3
5
7
1.0
1.0 0.001
2
3
5
7
0.01
2
3
5 IT00229
Drain Current, ID -- A
3.0
IT00228 10
RDS(on) -- Ta
Drain Current, ID -- A
yfs -- ID
Forward Transfer Admittance, yfs -- S
7 5 3 2
VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on) --
2.5
2.0
1.5
1.0
V =2.5 , VGS 0mA I D=8 =4.0V A, V GS =150m ID
1.0 7 5 3 2
--25 Ta=
C
75 C
0.5
25
C
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
1.0 7
0.1 0.01
2
3
5
7
0.1
2
3
5
IT00230 1000 7
IF -- VSD
VGS=0
Drain Current, ID -- A
7 1.0 IT00231
SW Time -- ID
Switching Time, SW Time -- ns
Forward Drain Current, IF -- A
5 3 2
5 3 2
VDD=15V VGS=4V td(off) tf tr
C Ta=7 5
--25 C
0.1 7
100 7 5
25C
5 3 2
td(on)
3 2
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT00232
10 0.01
2
3
5
7
0.1
2
3
5 IT00233
100 7 5
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
10 9
VGS -- Qg
Gate-to-Sourse Voltage, VGS -- V
VDS=10V ID=300mA
8 7 6 5 4 3 2 1
Ciss, Coss, Crss -- pF
3 2
Ciss
10 7 5 3 2
Coss Crss
1.0 0 5 10 15 20 25 30 IT00234
0 0 0.5 1.0 1.5 2.0 2.5 IT00235
Drain-to-Source Voltage, VDS -- V
Total Gate Charge, Qg -- nC
No.6549-3/4
3LN02N
0.5
PD -- Ta
Allowable Power Dissipation, PD -- W
0.4
0.3
0.2
0.1
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT01988
Note on usage : Since the 3LN02N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice.
PS No.6549-4/4

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