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STL60NH3LL N-channel 30V - 0.0065 - 30A - PowerFLATTM (6x5) Ultra low gate charge STripFETTM Power MOSFET General features Type STL60NH3LL VDSS 30V RDS(on) <0.0085 ID 16A (2) Improved die-to-footprint ratio Very low profile package (1mm max) Very low thermal resistance Very low gate charge Low threshold device PowerFLATTM(6x5) Description This application specific Power MOSFET is the latest generation of STMicroelectronics unique "STripFETTM" technology. The resulting transistor is optimized for low on-resistance and minimal gate charge. The Chip-scaled PowerFLATTM package allows a significant board space saving, still boosting the performance. Internal schematic diagram Applications Switching application Order codes Part number STL60NH3LL Marking L60NH3LL Package PowerFLATTM (6 x 5) Packaging Tape & reel April 2006 Rev 3 1/13 www.st.com 13 Contents STL60NH3LL Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STL60NH3LL Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (continuous) at TC = 25C Drain current (pulsed) Total dissipation at T C = 25C Total dissipation at T C = 25C Derating factor Value 30 16 30 30 16 64 60 4 0.03 -55 to 150 Unit V V A A A A W W W/C C ID (1) ID(2) IDM (3) PTOT(1) PTOT(2) Tj Tstg Operating junction temperature Storage temperature 1. The value is rated according R thj-C and is limited by wire bonding. 2. This value is according Rthj-pcb 3. Pulse width limited by safe operating area Table 2. Symbol Rthj-case Rthj-pcb (1) Thermal resistance Parameter Thermal resistance junction-case (drain) Max Thermal resistance junction-pcb Max 2 Value 2.08 31.3 Unit C/W C/W 1. When mounted on FR-4 board of 1inch , 2 oz Cu, t<10sec 3/13 Electrical characteristics STL60NH3LL 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,@125C VDS = 16V VDS= V GS, ID = 250A VGS= 10V, ID= 8A VGS= 4.5V, ID= 8A 1 0.0065 0.0085 0.0075 0.0105 Min. 30 1 10 100 Typ. Max. Unit V A A nA V Table 4. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test condictions Min. Typ. 1810 565 41 18 4.8 5.3 0.5 1.5 24 Max. Unit pF pF pF nC nC nC VDS=25V, f = 1MHz, VGS=0 VDD = 15V, ID = 16A, VGS = 4.5V (see Figure 15) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 3 4/13 STL60NH3LL Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test condictions VDD = 15V, ID = 8A RG= 4.7, VGS= 10V, (see Figure 14) VDD = 15V, ID = 8A RG= 4.7, VGS= 10V, (see Figure 14) Min. Typ. 8 65 30 20 Max. Unit ns ns ns ns Table 6. Symbol ISD ISDM VSD (1) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 16A, VGS = 0 ISD = 16V, di/dt = 100A/s VDD = 20V, T j = 25C (see Figure 16) 22 32 1.9 Test condictions Min Typ. Max 16 64 1.3 Unit A A V ns nC A 1. Pulsed: Pulse duration = 300s, duty cycle 1.5% 5/13 Electrical characteristics STL60NH3LL 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/13 STL60NH3LL Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/13 Electrical characteristics STL60NH3LL Figure 12. Allowable Iav vs Time in Avalanche Figure 13. Allowable Iav vs Time in Avalanche The previous curve gives the single pulse safe operating area for unclamped inductive loads under the following conditions: PD(AVE) =0.5*(1.3*BV DSS *I AV ) EAS(AR) =PD(AVE) *tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in avalanche (single pulse) tAV is the time in avalanche 8/13 STL60NH3LL Test circuit 3 Test circuit Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/13 Package mechanical data STL60NH3LL 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STL60NH3LL Package mechanical data PowerFLATTM (6x5) MECHANICAL DATA mm. DIM. MIN. A A1 A3 b D D1 D2 E E1 E2 E4 e L 0.70 3.43 2.58 4.15 0.35 0.80 TYP 0.83 0.02 0.20 0.40 5.00 4.75 4.20 6.00 5.75 3.48 2.63 1.27 0.80 0.90 0.027 3.53 2.68 0.135 4.25 0.163 0.47 0.013 MAX. 0.93 0.05 MIN. 0.031 TYP. 0.032 0.0007 0.007 0.015 0.196 0.187 0.165 0.236 0.226 0.137 0.103 0.050 0.031 0.035 0.139 0.105 0.167 0.018 MAX. 0.036 0.0019 inch 11/13 Revision history STL60NH3LL 5 Revision history Table 7. Date 21-Jul-2004 05-Oct-2004 12-Apr-2006 Revision history Revision 1 2 3 First Release Values Changed New template Changes 12/13 STL60NH3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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