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SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION.
KTC3536T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Adoption of MBIT Processes. High Current Capacitance. Low Collector-to-Emitter Saturation Voltage.
A F G
K
B
DIM A B
2 3 C D
MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1
2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
D
Ultrasmall-Sized Package permitting applied sets to be made small and slim. High Allowable Power Dissipation. Complementary to KTA1536T.
C L
G
High Speed Switching.
1
E F G H I J K L
H J
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse
)
SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 ) RATING 20 20 5 5 8 1.2 0.9 150 -55 150 UNIT V V V A A W
J
1. EMITTER 2. BASE 3. COLLECTOR
Marking
Lot No. Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton
INPUT
TEST CONDITION VCB=12V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=3A, IB=60mA IC=3A, IB=60mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz
PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =5V RL OUTPUT
MIN. 20 20 5 200 -
Storage Time
tstg
Fall Time
tf
V BE =-5V 20IB1=-20IB2=IC =3A
2001. 6. 30
Revision No : 0
I
TSM
HE
TYP. 200 0.85 160 46 32 MAX. 0.1 0.1 300 1.2 560 MHz pF UNIT A A V V V mV V
-
250
-
nS
-
10
-
1/3
KTC3536T
I C - V CE
100 mA
h FE - I C
20mA
40 mA
5 COLLECTOR CURRENT I C (A) 4 3 2 1 0 0 100
DC CURRENT GAIN h FE
A m 30
1K 500 300
Ta=75 C Ta=25 C Ta=-25 C
10mA
50mA 60mA 70mA 80mA 90mA IB=0mA
100 50 30
VCE =2V
200
300
400
500
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR-EMITTER VOLTAGE VCE (mV)
COLLECTOR CURRENT I C (A)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 0.01 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV)
IC /I B =20
VCE(sat) - I C
1K 500 300 100 50 30 10 5 3 1 0.01
25 Ta= C
IC /I B =50
C C 75 -25 Ta= Ta= C 25 Ta=
C 75 Ta= 25 C Ta=
0.03
0.1
0.3
1
3
10
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
VBE(sat) - I C
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10K 5K 3K 1.0 COLLECTOR CURRENT I C (A)
IC /I B =50
I C - V BE
0.9 0.8 0.7
Ta=75 C
VCE =2V
0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5
1K 500 300
Ta=-25 C
Ta=25 C
Ta=75 C
100 0.01
0.03
0.1
0.3
1
3
10
0.6
0.7
Ta=-25 C
Ta=25 C
0.8
0.9
COLLECTOR CURRENT I C (A)
BASE-EMITTER VOLTAGE V BE (V)
2001. 6. 30
Revision No : 0
2/3
KTC3536T
f T - IC
COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 1K 500 300
VCE =2V
C ob - V CB
1K 500 300
f=1MHz
100 50 30
100 50 30
10 0.01
0.03
0.1
0.3
1
3
10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
I C MAX.(PULSED)
50
100
Pc - Ta
COLLECTOR POWER DISSIPATION PC (W) 1.2
MOUNTED ON A
20 10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01
S
*
IC MAX (CONTINUOUS)
10
1.0 0.8 0.6 0.4 0.2 0
CERAMIC BOARD (600mm 2 0.8mm)
0
mS
S 1m
S*
10
DC OP ER
*
*
0m
S*
AT
IO N
* SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm)
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C) 10 3 0
0.1
0.3
1
3
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001. 6. 30
Revision No : 0
3/3

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