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| NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 APRIl 94 FEATURES * 120 Volt VCEO * Gain of 400 at IC=200mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Relay / solenoid driver * Battery powered circuits * Motor drivers ZTX694B C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation Tamb=25C derate above 25C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 120 120 5 1 0.5 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/C C Operating and Storage Temperature Range -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 3-244 MIN. 120 120 5 0.1 0.1 0.25 0.5 0.9 0.9 TYP. MAX. UNIT V V V A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* V V V V ZTX694B ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL fT Cibo Cobo ton toff MIN. 130 200 9 80 2900 TYP. MAX. UNIT MHz pF pF ns ns CONDITIONS. IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-245 ZTX694B TYPICAL CHARACTERISTICS IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C 0.8 IC/IB=100 VCE(sat) - (Volts) 0.6 VCE(sat) - (Volts) 0.6 0.4 0.4 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 +100C +25C -55C VCE=2V 1.5K 1.6 hFE - Typical Gain VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55C +25C +100C +175C IC/IB=100 1K 500 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1 -55C +25C +100C +175C VBE(sat) v IC Single Pulse Test at Tamb=25C 1.6 1.4 IC - Collector Current (Amps) VCE=2V VBE - (Volts) 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 0.01 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-246 |
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