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| (R) SMBYT03 FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SURFACE MOUNT DEVICE DESCRIPTION Single high voltage rectifier ranging from 200V to 400 V suited for Switch Mode Power Supplies and other power converters. SMC ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current Non repetitive surge peak forward current Storage and junction temperature range Tl=55C = 0.5 tp=10ms sinusoidal Parameter Value 10 3 60 - 40 to + 150 - 40 to + 150 Unit A A A C C Symbol VRRM Parameter Repetitive peak reverse voltage Value 400 Unit V THERMAL RESISTANCE Symbol Rth (j-l) Junction-leads Parameter Value 20 Unit C/W August 1998 - Ed : 2C 1/5 SMBYT03 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VF * Test Conditions Tj = 25C Tj = 100C IF = 3 A Min. Typ. Max. 1.5 Unit V 1.05 VR = VRRM 0.2 1.4 10 0.6 A mA IR ** Tj = 25C Tj = 100C Pulse test : * tp = 380 s, duty cycle < 2 % ** tp = 5 ms, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V Irr = 0.25A dIF/dt = -15A/s Min. Typ. Max. 25 60 Unit ns TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance) Symbol tIRM IRM VCC = 200V Tj = 100C Test Conditions IF = 3A Lp 0.05H dIF/dt = -50A/s Min. Typ. 35 1.5 Max. 50 2 Unit ns A To evaluate the conduction losses use the following equation : P = 1.1 x IF(AV) + 0.08 x I F2(RMS) Voltage (V) Marking 200 C2 300 C3 400 C4 Laser marking Logo indicates cathode 2/5 SMBYT03 Fig.1 : Low frequency power losses versus average current. P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 60 50 IM(A) T IM 40 30 T P=0.5W =tp/T tp 20 10 P=1.5W P=2.5W I F(av)(A) =tp/T tp 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Non repetitive surge peak forward current versus overload duration. IM(A) IM t =0.5 Fig.4 : Relative variation of thermal impedance junction to lead versus pulse duration. K 20 18 16 14 12 10 8 6 4 2 0 0.001 1 K = Rth(j-c) =0 . 2 Zth(j-c) (tp. ) =0 . 5 Tc=25 o C Tc=40 o C Tc=5 5 oC 0.1 =0 . 1 T Single pulse t(s) 0.01 0.1 1 10 0.01 0.001 tp(s) =tp/T tp 0.01 0.1 1 10 Fig.5 : Voltage drop versus forward current. (Maximum values) VFM(V) Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) I F(av)(A) Rth(j-a)=Rth(j-l) =0.5 T 3.0 2.7 2.4 Tl=100 oC 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 0.01 0.1 3.5 3.0 2.5 2.0 1.5 1.0 I FM(A) =tp/T Rth(j-a)=65 o C/W 1cm2 Cu tp 0.5 Tamb( o C) 1 10 50 0.0 0 20 40 60 80 100 120 140 160 3/5 SMBYT03 Fig.7 : Recovery time versus dIF/dt. Fig.8 : Peak forward voltage versus dIF/dt. Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Recovery charge versus dIF/dt. (typical values) Fig.11 : Dynamic parameters versus junction temperature. Fig.12 : Thermal resistance junction to ambient versus copper surface under each lead. 100 Printed circuit : epoxy (e=35um) 90 80 70 60 50 40 30 20 10 Scu(cm 2 ) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Rth(j-a) 4/5 SMBYT03 PACKAGE MECHANICAL DATA SMC E1 DIMENSIONS REF. D Millimeters Inches Min. Typ. Max. Min. Typ. Max. A1 A2 b E 2.40 2.70 3.00 0.094 0106 0.118 0.05 2.90 0.29 0.20 0.002 3.10 0.114 0.32 0.011 0.008 0.122 0.013 c E1 A1 6.30 6.40 6.60 0.248 0.252 0.260 4.80 5.00 5.20 0.189 0.197 0.205 7.60 7.80 8.00 0.299 0.307 0.315 1.30 1.70 0.051 0.067 D E L C L A2 b FOOTPRINT DIMENSIONS SMC 3.3 2.0 4.2 2.0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previous ly supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 |
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