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| BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features * * * * * High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly G E D G H K J L M SOT-23 A D TOP VIEW S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data * * * * * Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections (see Diagram) Marking: S17 Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25C unless otherwise specified Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 200 200 20 100 310 -55 to +150 Unit V V V mA mW C Characteristic Gate-Source Voltage (pulsed) (Note 2) Drain Current (continuous) Power Dissipation @ TC = 50C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25C unless otherwise specified Characteristic Symbol IF VF Value 0.3 0.85 Unit A V Max Forward Current (continuous) Forward Voltage Drop (typical) @ VGS = 0, IF = 0.3A, Tj = 25C Notes: 1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm2 area. 2. Pulse Test: Pulse width = 80s, duty cycle = 1%. DS11401 Rev. D-3 1 of 2 BS817 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Gate-Source Threshold Voltage Drain-Source ON Resistance @ TA = 25C unless otherwise specified Symbol -V(BR)DSS -IGSS -IDSS -IDSX -VGS(th) rDS(ON) RqJSB RqJA Ciss Coss Crss tON tOFF Min 200 -- -- -- -- -- -- -- Typ 230 -- -- 2.8 30 -- -- 58 8.0 1.5 5.0 15 Max -- 10 30 1.0 3.5 50 320 400 -- Unit V nA nA A V W K/W K/W pF Test Condition -ID = 100A, VGS = 0 -VGS = 15V, VDS = 0 -VDS = 130V, VGS = 0 -VDS = 70V, -VGS = 0.2V -VGS = VDS, -ID = 1.0mA -VGS = 2.8V, -ID = 20mA Note 1 Note 1 -VDS = 20V, VGS = 0, f = 1.0MHz -VGS = 10V, -VDS = 10V, RD = 100W Thermal Resistance, Junction to Substrate Backside Thermal Resistance, Junction to Ambient Air Input Capacitance Output Capacitance Feedback Capacitance Switching Times Turn-On Time Turn-Off Time -- -- ns Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5 cm2 area. 2. Pulse test: Pulse width = 80s, duty cycle = 1%. 500 -VDS(0N), DRAIN-SOURCE ON-RESISTANCE (W) See Note 1 100 -VDS = 0.1V TA = 25 C Pd, POWER DISSIPATION (mW) 400 300 10 200 100 0 1 0 10 20 -VGS, GATE-SOURCE VOLTAGE (VOLTS) Fig. 2, Drain-Source Resistance vs Gate-Source Voltage 0 100 TSB, SUBSTRATE TEMPERATURE ( C) Fig. 1, Power Derating Curve 200 DS11401 Rev. D-3 2 of 2 BS817 |
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